Abstract:An extraction method to obtain the channel noise current in deep-submicron MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. Extracted channel thermal noise from long channel devices is consistent with the long channel theory (i d 2 /∆f = γ 4kTg do with γ =2/3 in saturation). The value of γ can increase up to 1.3 for a 0.18µm device. Extracted channel thermal noise as a function of bias for five different channel lengths is also presented.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.