High-Frequency Electrical Modeling and Characterization of Differential TSVs for 3-D Integration Applications

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

“…However, with the increase of the operating frequency of 3D ICs, noise coupling and electromagnetic interference (EMI) problems among single‐ended TSV are more and more serious with the increasing demands of system bandwidth. Therefore, differential TSVs (two TSVs as the signal wires and the others as their return paths) are generally used in high‐speed 3D ICs to guarantee signal integrity because of its relatively high noise suppression for common‐mode noise and EMI reduction …”

“…So it is an essential way in common use to improve the immunity of single‐ended RF/mmW against the noise. Much work has been done to study a scalable structure and a circuit model of this shielding system since its discovery …”

“…Therefore, differential TSVs (two TSVs as the signal wires and the others as their return paths) are generally used in high-speed 3D ICs to guarantee signal integrity because of its relatively high noise suppression for common-mode noise and EMI reduction. [13][14][15][16][17][18] The Ground-Signal-Signal-Ground type differential TSVs (GSSG-type D-TSVs) were manufactured and measured successfully in, 13 as shown by Figure 5. The equivalent-circuit model was proposed with frequency up to 20 GHz, and each proposed analytical equation in the model was the function of the structural and material design parameters of TSV, such as the TSV diameter, pitch between TSVs, and TSV oxide thickness, which was scalable.…”

“…The through‐silicon vias (TSVs) are short vertical interconnections that carry a variety of signals (power, clock, and data) between different layers within three‐dimensional integrated circuits (3D ICs), which can significantly shorten the interconnect length between circuit blocks and thereby reduces the time delay and power consumption . Correspondingly, the TSV‐based 3D ICs provide opportunities for the reduction of dimensions and power consumption, which is an exciting technology due to the smaller form factor, improved global signaling, and ability to integrate heterogeneous circuits within a single platform.…”

“…On the other hand, the electrical characteristics of TSVs are critical to the performance of mmW 3D ICs due to the abundant utilization of TSVs. Therefore, many studies have been carried out for modeling of TSV interconnects together with their fabrication technologies . What is more, TSVs exploiting new structures and materials were also researched to enhance the performance of 3D ICs …”