High frequency DC:DC power conversion: the influence of package parasitics

Abstract

Operating power MOSFET devices at frequencies over 1MHz will pose significant challenges to established power electronic packages such as the D2-Pak and wirebonded SO-8 devices.In this paper the high frequency parasitic impedances of a range of power electronic packages are presented. Results show that a source mounted power package technology based upon a copper clip type assembly has considerably lower parasitic impedance compared to conventional power packaging at frequencies in the range of 500KHz to over 1MHz.The resistance of conventional packages recorded over this range of frequencies increases significantly as the frequency approaches 1Mhz. This is expected to be a result of skin effect related phenomena occurring in wire bonds and package leads. Package impedance data up to frequencies of 5MHz will be presented for a range of packages along with efficiency data recorded from devices operating in multi-phase buck converter circuits.

Extension de la plage de fonctionnement à rendement élevé des alimentations à découpage

“…En effet, il devient impératif de maîtriser les inductances parasites qui contribuent aux pertes en commutation, à la La connectique imprimée (PCB ou SMI (substrat métallique isolé) doit suivre également la même évolution, la figure 21 présente l'évolution de la résistance et de l'inductance normalisée apparente d'un conducteur imprimé selon son épaisseur et sa constitution en fonction de la fréquence [12]. On constate donc la nécessité d'adapter le choix technologique de la connectique à la gamme de fréquence envisagée.…”

Hybrid MOSFET/Driver for Ultra-Fast Switching

“…4. This result suggests that the package inductance of the totem pole IC plays an important role in the total parasitic gate inductance [2] otherwise the speed should be the same for a single driver with Rg = 1.1 Ohm and a dual driver using 2 Ohm on each side. PCB#3 is designed to verify this explanation and improve the performance further.…”

3D EM simulations and analysis of in-package metal plate interconnecting high-side and low-side FETs of DC-DC converter

“…It is shown that the parasitics of some power electronic packages have a considerable effect on the operation of a HFVR at low-MHz frequency range [3]. Since the largest portion of the integrated HFVR based on a synchronous buck topology is taken by the MOSFET switches, as it can be seen in [4], it is expected that the large metal plate that connects the HS FET and LS FET makes the largest contribution to the overall parasitic impedance.…”