Hybrid MOSFET/Driver for Ultra-Fast Switching

Tang, Tang; Burkhart,

doi:10.1109/ipmc.2008.4743596

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…On the other hand, the power handling capability of MOSFET is less appreciable in case of high power applications like high-voltage dc (HVDC), traction drives, propulsion and roller mills, to name a few. However, the applications involving EVs and energy storage fall in the range of 30-100 kW in which the choice of MOSFET is idealistic [15]. It is worth highlighting that, owing to the recent advancement in device technology, the conventional Si switches are being replaced with wide bandgap devices like SiC due to their low losses, lower settling time and better switching characteristics [16,17].…”

Section: Switch Characteristics and Device Selectionmentioning

confidence: 99%

Analysis, design, and implementation of an improved gate driver forhigh switching frequency EV application

Tomar

Sandeep

Verma

et al. 2020

IET Power Electronics

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Electric vehicle (EV) battery chargers operate from moderate switching frequency (MSF) to high switching frequency (HSF) to achieve high power density. To operate the HSF power electronic devices, the selection of gate drivers and its associated components is crucial. Laboratory developed gate driver circuits (GDCs) often fail to drive these HSF devices adequately due to noise vulnerability, PWM duty loss and common-mode currents. Further, at MSF and HSF ranges, the gateto-source terminals of the device are subjected to high voltages due to unwanted noise resulting in false turn-on of the switch leading to the converter failure. In this paper, firstly, an improved GDC and it's associated component selection criteria are proposed for HSF EV application. The proposed GDC is simple in structure with minor components; thus, it is cost-effective and highly reliable. Secondly, the proposed GDC is compared with the other commercially available competent GDCs. Power losses, cost and dynamic switching performance are the figures-of-merit for the quantitative assessment. From the comparison, it will be shown that the proposed GDC exhibits an overall superior performance among the popular GDCs. Finally, the distinctive features of the proposed GDC are experimentally validated for several test cases and the obtained results are presented.

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Section: Switch Characteristics and Device Selectionmentioning

confidence: 99%

Analysis, design, and implementation of an improved gate driver forhigh switching frequency EV application

Tomar

Sandeep

Verma

et al. 2020

IET Power Electronics

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show abstract

“…In order to allow for a reliable control of the confinement, we therefore switch off the radiofrequency drive during the control period. This can be efficiently achieved by a solid state radiofrequency toggle switch [24] directly after a high voltage rf generator [25]. In many cases the high voltage rf generator is replaced by a low voltage radiofrequency generator with a subsequent radiofrequency amplifier with 50 Ω impedance.…”

Section: Robustness Improvementsmentioning

confidence: 99%

Transient non-confining potentials for speeding up a single ion heat pump

et al. 2018

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We propose speeding up a single ion heat pump based on a tapered ion trap. If a trapped ion is excited in an oscillatory motion axially the radial degrees of freedom are cyclically expanded and compressed such that heat can be pumped between two reservoirs coupled to the ion at the turning points of oscillation. Through the use of invariant-based inverse engineering we can speed up the process without sacrificing the efficiency of each heat pump cycle. This additional control can be supplied with additional control electrodes or it can be encoded into the geometry of the radial trapping electrodes. We present a novel insight into how speed up can be achieved through the use of inverted harmonic potentials and verify the stability of such trapping conditions.

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“…This method is capable of significantly reducing the parasitic elements; especially inductance in the package, bonding wire and PCB traces, and is widely used in high speed digital circuit assembly. This technique has been applied to a power MOSFET/driver circuit to develop a Hybrid Switch Module (HSM) [1]. The HSM not only reduces the MOSFET switching time, but also improves the accuracy of the gate voltage measurement.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the ultra-fast switching dynamics in a hybrid MOSFET/Driver

Tang

Burkhart

2009

2009 IEEE Pulsed Power Conference

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The turn-on dynamics of a power MOSFET during ultra-fast, ~ ns, switching are discussed in this paper. The testing was performed using a custom hybrid MOSFET/Driver module, which was fabricated by directly assembling die-form components, power MOSFET and drivers, on a printed circuit board. By using die-form components, the hybrid approach substantially reduces parasitic inductance, which facilitates ultra-fast switching. The measured turn on time of the hybrid module with a resistive load is 1.2 ns with an applied voltage of 1000 V and drain current of 33 A. Detailed analysis of the switching waveforms reveals that switching behavior must be interpreted differently in the ultra-fast regime. For example, the gate threshold voltage to turn on the device is observed to increase as the switching time decreases. Further analysis and simulation of MOSFET switching behavior shows that the minimum turn on time scales with the product of the drain-source on resistance and drain-source capacitance, R DS(on) C OSS . This information will be useful in power MOSFET selection and gate driver design for ultra-fast switching applications.

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Hybrid MOSFET/Driver for Ultra-Fast Switching

Cited by 5 publications

References 2 publications

Analysis, design, and implementation of an improved gate driver forhigh switching frequency EV application

Analysis, design, and implementation of an improved gate driver forhigh switching frequency EV application

Transient non-confining potentials for speeding up a single ion heat pump

Analysis of the ultra-fast switching dynamics in a hybrid MOSFET/Driver

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