High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

“…In general, the C-f plots in the idealized case are frequency independent [12][13][14][15]. However, this idealized case is often disturbed due to the presence of the interface states at the interfacial layer and with the semiconductor interface [16][17][18][19]. At low ac signal, the charge is exchanged between the interface states and the semiconductor and so, the measured junction capacitance is the sum of the space charge and interface states capacitance [20].…”

Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

“…At higher frequencies capacitance remains almost constant, while at the lower frequencies capacitance and conductance change. This means that at higher frequencies, the interface states cannot follow the AC signal [23] and consequently cannot contribute much to the capacitance. It indicates that the interface states are responsible for the observed frequency dispersion in C and G/ω curves.…”

Analysis of interface states of metal–insulator–semiconductor photodiode with n-type silicon by conductance technique

“…4. The capacitance increases with decreasing frequency and this case indicates the presence of a continuous distribution of the interface states, leading to a progressive decrease of the response of the interface states to the applied alternating voltage [24,25]. At lower frequencies, the higher values of the capacitance are due to excess capacitance and this capacitance results from the interface states in equilibrium with the n-Si.…”