High-field fast-risetime pulse failures in 4H- and 6H-SiC <i>pn</i> junction diodes

Neudeck, Philip G.; Fazi, C.

doi:10.1063/1.362922

Cited by 33 publications

(12 citation statements)

References 16 publications

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“…Both increasing and decreasing breakdown voltage with increasing temperature has been reported for 4H. [6][7][8] In the present letter we investigate the temperature dependence of avalanche breakdown in chemical vapor deposition ͑CVD͒-grown p-n diodes in 4H silicon carbide, both for uniform and microplasma breakdown. A study of 6H devices has also been performed for the purpose of comparison.…”

mentioning

confidence: 95%

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Konstantinov

Nordell

Wahab

et al. 1998

Applied Physics Letters

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The temperature dependence of avalanche breakdown is investigated for uniform and microplasma-related breakdown in epitaxial 4H SiC p-n junctions. P-n mesa diodes fabricated with positive angle beveling and oxide passivation can withstand temperatures of up to 300–400 °C in the breakdown regime. Uniform avalanche breakdown in 4H silicon carbide appears to have a positive temperature coefficient, in contrast to the 6H polytype, where the temperature coefficient is negative. The influence of deep levels on avalanche breakdown in epitaxial diodes is of minor importance for uniform breakdown, but appears to be significant for breakdown through microplasmas. A negative temperature coefficient for the avalanche breakdown voltage can be observed even for 4H SiC if the breakdown is dominated by microplasmas.

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confidence: 95%

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Konstantinov

Nordell

Wahab

et al. 1998

Applied Physics Letters

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“…The SiC samples were grown in an intermediate frequency (2,500 Hz) inductively heated furnace by using PVT method. In a series of crystal growth runs, 2-in 6H-SiC crystals and 2-in 4H-SiC crystals were grown on Si-terminated 6H seeds and C-terminated 4H seeds, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Silicon carbide (SiC) is a very promising semiconductor material for electronic applications because of its excellent electronic properties, super thermal and chemical stabilities, and high-power and high-frequency capabilities, as well as very good tolerance to radiation damage [1][2][3][4]. On top of these, SiC single crystal is attractive for being the substrate in the heteroepitaxial growth of other important materials [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

et al. 2014

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Here, we report a commonly occurring defect related to nitrogen doping in silicon carbide crystals grown by physical vapor transport method while its formation mechanism has remained unclear. It is often mislabeled as planar hexagonal void defect (PHVD) owing to their similar in shape and size on wafer surface. Our results indicate that this is a new type of defect and differs from PHVD with respect to their nitrogen concentrations, void shapes and the connections to micropipe. We found that the carbon-rich vapor during the crystal growth is responsible for the formation of this type of defect. A possible three-stage defect developing mechanism and measures to avoid the defects are proposed.

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“…All these properties often make traditional semiconductor and junction models inapplicable in the case of SiC. First experimental evidence of the doping carrier freeze-out influence on SiC device performance has been demonstrated by Neudeck et al, 4 who observed a reduction of the statically measured pn junction breakdown voltage when fast-risetime pulse was applied to the junction. Lades et al 5 simulated the influence of incomplete doping ionization on transient behavior of SiC pn diode, MOSFET and thyristor.…”

Section: Introductionmentioning

confidence: 98%

Influence of carrier freeze-out on SiC Schottky junction admittance

Los

Mazzola

2001

Journal of Elec Materi

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Special Issue Paper 235 INTRODUCTIONSilicon carbide is a very promising semiconductor for high-power, high frequency and high temperature applications. 1-3 One of the interesting features that distinguishes SiC from traditional narrow bandgap semiconductors, such as for example silicon, is that common doping impurities in SiC have activation energies which are larger than k B T at room temperature. This results in a nonzero occupation number for such impurities, and leads to various effects related to impurity ionization and neutralization when the impurity quasi-Fermi level position changes, for example due to a change in an applied bias. The situation is also complicated by the existence of inequivalent lattice sites with different parameters for the same impurity species in many, e.g., 4H and 6H, SiC polytypes. (Because the crystalline lattice of these polytypes is not a Bravais lattice and does not possess full hexagonal symmetry.) Additionally, for such imIncomplete impurity ionization is investigated in the case of nitrogen donors and aluminum and boron acceptors in 4H and 6H SiC. We calculate the degree of ionization for these impurities residing on different lattice sites in a broad temperature range and for different impurity concentrations. It is shown that the degree of carrier freeze-out is significant in heavily N-doped 6H SiC and in Al-and B-doped SiC. Using the general Schottky junction admittance model we calculate the temperature and frequency dependencies of the junction admittance in the case when impurity ionization by the applied ac bias is present. It is shown that admittance frequency dispersion may be significant at room temperature in the case of N-and B-doped SiC. Finally, we calculate the Schottky junction capacitance as a function of the applied dc bias and simulate the doping profile, using the capacitance-voltage data. The calculated profile is shown to deviate from the actual impurity concentration profile if the impurity ionization time constant is comparable with the ac bias period, which is so for Nand B-doped SiC with certain values of the impurity activation energy and capture cross-section.

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High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodes

Cited by 33 publications

References 16 publications

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

Influence of carrier freeze-out on SiC Schottky junction admittance

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