Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Konstantinov, A. O.; Nordell, N.; Wahab, Q.; Lindefelt, Ulf

doi:10.1063/1.122303

Cited by 40 publications

(13 citation statements)

References 9 publications

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“…Secondly, Zener tunneling is ruled out because the dark current increases with temperature as shown in Figure 5b, while Zener tunneling current decreases with increasing temperature 44 . Finally, the impact ionization is attributed to the multiplication while no microplasma avalanche or premature avalanche are observed as the EQE decreases with temperature, especially under high bias as shown in Figure 5c 44,45 . In PSS APDs, although phonon scattering has been greatly reduced compared with conventional HJ APD, the rudimental scattering still holds impacts on the multiplication performance.…”

Section: Device Performancementioning

confidence: 95%

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Zheng

Wang

et al. 2016

Applied Physics Letters

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Abstract:Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace the bulky and fragile photomultiplier tubes (PMT) for weak light detection. However, intrinsic limits in semiconductors make the former still inferior to the latter on device performance up to now. In conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device has to work under breakdown bias, wherein carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. In this case, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. On the other hand, PMT can achieve stable high gain under constant bias (linear mode). Here, we demonstrate an APD works like a PMT, which means it can work under constant bias and holds high gain without breakdown simultaneously. The device is based on a GaN/AlN periodically-stacked-structure (PSS). For the PSS holds the intrinsic features that there are deep Γ valleys and larger band offset in conduction band, electron encountered much less scatterings during transport in PSS APD. Electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. Extremely high ionization coefficient (3.96×10 5 /cm) of electron and large ionization coefficient ratio (over 100) between electron and hole is calculated in the PSS APD by Monte-Carlo simulations and a recorded high gain (10 4 ) tested under constant bias without breakdown is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS and no quenching circuits are needed for sustainable detection. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path to realize highly sensitive APD working under constant bias like PMT.Keywords: Avalanche photodiode; GaN; Ionization; Periodically stacked structure; Transport Introduction:

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Section: Device Performancementioning

confidence: 95%

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Zheng

Wang

et al. 2016

Applied Physics Letters

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“…Many researchers have reported that the temperature coefficient of V BD for 4H-SiC devices is positive. [25][26][27][28] From Ref.…”

Section: Influence Of Different Temperature Coefficientsmentioning

confidence: 99%

Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

Lou¹,

Saito²,

Nishizawa³

2021

Jpn. J. Appl. Phys.

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Current flowing through parallel-connected SiC MOSFETs are imbalanced during unclamped inductive switching (UIS) test, which can be imaged as the emergency interruption of solid-state circuit breakers, due to variations of breakdown voltage. The imbalanced current can drive devices into thermal destruction. This study evaluated acceptable breakdown voltage variations of two parallel-connected SiC MOSFETs under different total current, load inductances, and breakdown voltage temperature coefficient conditions during UIS mode operation by numerical simulation. The acceptable variation at 298 K was found to decrease with increasing total current and be influenced by the change of total current greater with larger inductances. SiC MOSFETs with larger breakdown voltage temperature coefficients allowing larger variations were also clarified.

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“…Построенная таким способом ВАХ уже не будет изотермической, поскольку во время пропускания лавинного импульса происходит сильный разогрев базовой области диода. Поскольку 4H-SiC p + −n 0 -переходы имеют положительный температурный коэффициент напряжения пробоя [7][8][9], кривая 2 на рис. 5 выглядит как S-образная.…”

Section: неизотермическая вахunclassified

Устойчивость высоковольтных (1430 В) 4H-SiC p-=SUP=-+-=/SUP=--n-=SUB=-0-=/SUB=--n-=SUP=-+-=/SUP=--диодов к лавинному пробою

Иванов¹,

Самсонова²,

Потапов³

2018

Физика И Техника Полупроводников

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Проведены исследования электротеплового пробоя в высоковольтных (1430 В) 4H-SiC p + −n 0 −n +-диодах c толщиной n 0-базы 7.5 мкм, концентрацией доноров 8.0 • 10 15 см −3 и площадью 4.9 • 10 −4 см 2. Устойчивость диодов к лавинному пробою охарактеризована максимальной энергией одиночного импульса лавинного тока, которая может быть рассеяна диодом до того, как происходит его катастрофический отказ (деструкция). При длительности импульса ∼ 1 мкс максимальная энергия составляет 1.4 мДж (2.9 Дж/см 2). Показано, что деструкция диодов вызвана локальным перегревом структуры диода до температуры около 1600 K, при которой концентрация собственных носителей становится больше концентрации легирующих доноров в блокирующей n 0-базе.

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Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

Cited by 40 publications

References 9 publications

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test

Устойчивость высоковольтных (1430 В) 4H-SiC p-=SUP=-+-=/SUP=--n-=SUB=-0-=/SUB=--n-=SUP=-+-=/SUP=--диодов к лавинному пробою

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