High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects

Marinoni, M.; Touboul, Antoine; Zander, D.; Petit, C.; Wrobel, Frédéric; Carvalho, A.M.J.F.; Arinero, Richard; Ramonda, Michel; Saigné, Frédéric; Weulersse, C.; Buard, N.; Carrière, T.; Lorfèvre, E.

doi:10.1109/tns.2008.2006489

Cited by 11 publications

(4 citation statements)

References 19 publications

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“…On the other hand, it was reported that ion latent tracks induced by heavy ion irradiation can induce the degradation of blocking layers and increase leakage current. [37][38][39][40][41] The (dE/dx) e of Ta ions is about 32.8 keV/nm in Al 2 O 3 , which exceeds the threshold value to form the latent tracks (6 keV/nm-10 keV/nm [42,43] ). Thus, Ta ions can generate a localized region of physical damage (latent track) in the blocking layer, which enhances the J e3 process.…”

Section: Resultsmentioning

confidence: 98%

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by C–V measurement

Chen

Xirong

et al. 2023

Chinese Phys. B

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Heavy ion irradiation effects on charge trapping memory (CTM) capacitors with TiN/Al2O3/HfO2/Al2O3/HfO2/SiO2/p-Si structure have been investigated. The ion induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage (C-V) characteristics. The C-V curves shifted towards negative direction after swift heavy ion irradiation, which is due to the net positive charges accumulate in trapping layer. Memory window decreases with the increase of ion fluences in high voltage, which results from the heavy ion induced structure damage in blocking layer. The mechanism of the heavy ion irradiation effects on CTM capacitors was discussed in detail with energy band diagrams. The result may help to better understand the physical mechanism of the heavy ion induced degradation of CTM capacitors.

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Section: Resultsmentioning

confidence: 98%

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by C–V measurement

Chen

Xirong

et al. 2023

Chinese Phys. B

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“…Similarly, if the displacement damage is near the drain region, the gate-to-drain capacitance may have a significant change. As the displacement region is introduced along the track of trajectory of ions [8], change in the gate-to-source capacitance and gate-to-drain capacitance may be a reflection of the location of displacement damage. It is valuable for investigating the location of the displacement damage in the device.…”

Section: Resultsmentioning

confidence: 99%

Effect of Heavy Ion Irradiation on the RF Performance of 0.18μm Bulk Si MOSFETs

Tan

Yang

et al. 2012

ECS Trans.

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In this work, the radio frequency (RF) performance degradation of very-deep-submicron (UDSM) MOSFETs induced by heavy-ion irradiation is investigated. Both the static characteristics and Sparameters are evaluated for 0.18μm bulk Si CMOS devices after exposure to heavy ions. The gate-to-source capacitance, gate-todrain capacitance and source/drain series resistance after irradiation show significant shift. It can be explained by the fluctuation in potential and the dopant concentration which is introduced by displacement damage near LDD regions in the channel. Moreover, the cut-off frequency (f T ) is also reduced due to the combined effect of transconductance degradation and gate capacitance change, which will reduce the circuit operation speed and may affect the input and output matching in key RF circuits. The characterization of the ion strike location in the channel region is also discussed in this paper.

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“…In order to quantify the impact of heavy ion irradiation on the reliability of unbiased devices and devices biased inside their SOA an accelerated reliability standard method namely Constant Voltage Stress (CVS) was used [18]. The use of statistical methods for assessing heavy ion impact on device's sensitivity has appeared recently to be of interest in the field of radiation hardness assurance [11], [14], [19]- [21]. TDDB measurements are performed over time periods (less than 30 kseconds) by applying a constant voltage equal to 44 V on the gate oxide with source and drain grounded (i.e., V ).…”

Section: Post Radiation Lifetime Degradation and Latent Defectsmentioning

confidence: 99%

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

Privat¹,

Touboul²,

Michez³

et al. 2014

IEEE Trans. Nucl. Sci.

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This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.

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High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects

Cited by 11 publications

References 19 publications

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by C–V measurement

Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by C–V measurement

Effect of Heavy Ion Irradiation on the RF Performance of 0.18μm Bulk Si MOSFETs

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

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