High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application

Okuno, Junko; Kunihiro, Takafumi; Konishi, Kenta; Maemura, Hideki; Shuto, Yusuke; Sugaya, Fumitaka; Materano, Monica; Ali, Tarek; Lederer, Maximilian; Kuehnel, Kati; Seidel, Konrad; Schroeder, Uwe; Mikolajick, Thomas; Tsukamoto, Masanori; Umebayashi, Taku

doi:10.1109/imw51353.2021.9439595

Cited by 38 publications

(28 citation statements)

References 4 publications

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“…We have reported a 64 kbit FE-type 1T1C FeRAM with higher cycling tolerance for hard breakdown with lower voltage operation via HZO film thickness scaling [17], [18]. In this study, we present an extension of the previous work on investigating film thickness scaling and experimentally demonstrating its effect by array-level endurance analysis for the first time.…”

Section: Introductionmentioning

confidence: 86%

“…The properties of the 1T1C FeRAM array using 8-nm and 10nm samples consisting of TiN/HZO/TiN capacitors were previously reported in [17], [18]. The RBERs due to hard breakdown were investigated on both 8-nm and 10-nm samples using 4 kbits for capacitors with different capacitance areas of 0.20, 0.40, and 1.00 µm 2 in a memory cell, as shown in Fig.…”

Section: Reliability Characterization For 1t1c Feram Arraymentioning

confidence: 95%

“…For further reliability analyses, the retention and fatigue characteristics of the MFM capacitors need to be investigated. We characterized the retention characteristics using a single large capacitor in a previous study [17] and obtained negligibly small changes in polarization. In terms of the fatigue characteristics, the remanent polarization was observed to degrade by 30% during 10 9 cycles owing to the domain pinning in the MFM film [17].…”

Section: Reliability Characterization For 1t1c Feram Arraymentioning

confidence: 99%

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Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Okuno¹,

Kunihiro²,

Konishi³

et al. 2022

IEEE J. Electron Devices Soc.

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Section: Introductionmentioning

confidence: 86%

Section: Reliability Characterization For 1t1c Feram Arraymentioning

confidence: 95%

Section: Reliability Characterization For 1t1c Feram Arraymentioning

confidence: 99%

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Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Okuno¹,

Kunihiro²,

Konishi³

et al. 2022

IEEE J. Electron Devices Soc.

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“…Recently, TiN/Hf0.5Zr0.5O2/TiN [2] and TiN/HfO2:Si/TiN [3] ferroelectric capacitors were successfully integrated in the Back-End-Of-Line (BEOL) of 130nm CMOS technology, demonstrating their scalability and compatibility with low thermal budgets. Functional FeRAM arrays were reported for the first time by Okuno et al [4], [5], in which the Hf0.5Zr0.5O2-based capacitor (1C) of the bitcell is integrated in the Middle-Of-Line (MOL) on the contact of the transistor (1T), prior to BEOL process. This integration approach allows crystallization anneal higher than 500°C to be used [5].…”

Section: Introductionmentioning

confidence: 99%

“…Functional FeRAM arrays were reported for the first time by Okuno et al [4], [5], in which the Hf0.5Zr0.5O2-based capacitor (1C) of the bitcell is integrated in the Middle-Of-Line (MOL) on the contact of the transistor (1T), prior to BEOL process. This integration approach allows crystallization anneal higher than 500°C to be used [5]. In this paper, 16kbit 1T-1C FeRAM arrays with BEOL integrated HfO2:Si-based ferroelectric capacitors are designed and demonstrated for the first time.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO₂: Si-Based 1T-1C FeRAM Arrays

François

Coignus

Makosiej

et al. 2022

IEEE Trans. Electron Devices

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16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). 0 state and 1 state distributions measured on the arrays demonstrate perfect yield at 4.8V operation, with extrapolations suggesting memory window is still open at 6 sigma statistics. Programming speed down to 4ns at 4V is highlighted at the array level, together with endurance up to 10 7 cycles. Promising data retention up to 10 4 s at 125°C is measured on the arrays and, for the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. Memory window on 16kbit arrays remains open down to 2.5V programming voltage and when capacitor area decreases from 0.36µm² down to 0.16µm², with calculated programming energy lower than 100fJ/bit. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.

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Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Shen,

Sun,

et al. 2024

Adv Funct Materials

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Low‐power and parallel processing Neuromorphic computing that imitates on the human brain's extraordinary data processing and learning capabilities is promising in non‐von Neumann application platforms in the post‐Moore era. Ferroelectric domain walls appearing as nanoscale topological defects in solids exhibit coexisting ordering parameters besides the spontaneous polarization, leading to the emergence of rich physics and electronic effects in the development of neuromorphic electronics that go beyond the conventional CMOS. In this study, the four‐state domain wall memory is developed on LiNbO3 ferroelectric thin films integrated with Si substrates, where each state can be stably manipulated at a specific low voltage, showcasing outstanding fatigue resistance and retention performance. The constructed crossbar array that functions as a kernel for image convolution can be used to implement processing operations like image filtering, sharpness enhancement, and edge detection. Additional simulation from a convolutional neural network model shows 96.98% accuracy on the Modified National Institute of Standards and Technology handwritten digits dataset. The stable multi‐state domain wall memory provides a new approach for computing and promotes research in domain wall electronics to meet future enormous demands of big data.

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High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application

Cited by 38 publications

References 4 publications

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO₂: Si-Based 1T-1C FeRAM Arrays

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

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High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application

Cited by 38 publications

References 4 publications

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

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Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO₂: Si-Based 1T-1C FeRAM Arrays