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16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/HfO2:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16µm² and switching speed down to 4ns. Promising endurance is reported at the array level up to 10 7 cycles. For the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.
TiN/Gd:HfO2/TiN metal/ferroelectric/metal structures were elaborated in one batch by plasma enhanced atomic layer deposition. The crystal structure and ferroelectric properties of 12-nm-thick Gd-doped HfO2 thin films are investigated. The modulation of the Gd content within the HfO2 layer leads to a subsequent variation of crystalline phases; predominance of the orthorhombic phase correlates with a maximum 2·Pr value of 30 μC/cm2 for 1.8% of Gd doping as well as a ferroelectric polarization switching endurance up to 7 × 109 cycles. These remarkable properties of Gd:HfO2 material compared to previous works are likely the consequence of nonexposure to air of metal/insulator interfaces during stack deposition, preventing their oxidation and/or carbon contamination.
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