Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2–ZrO2 ferroelectric films with different thicknesses

“…From the above test results, it can be seen that the charged oxygen vacancy content in the 6 nm HZO film is the highest, which leads to the most obvious change in the internal bias field after the voltage bias is applied, but it is interesting that this will not cause the degradation of TDDB characteristics. The oxygen vacancy defect concentration before and after CVS (D it ) was further measured and analyzed using the conductivity method in [33]. The measured G p -ω results of 6, 10 and 20 nm HZO films were shown in figure 5.…”

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

“…At the step of the edge, the electric field is enhanced, accelerating DB. [21][22][23] This is supported by the fact that the lifetime of ferroelectric capacitors decreases exponentially with the magnitude of the electric field 7,24,25) From these facts, electric field concentration due to the steps at the bottom-electrode edge and roughness at the electrode/HZO interfaces can shorten the lifetime by several orders of magnitude.…”

Physics, Structures, and Applications of Fluorite‐Structured Ferroelectric Tunnel Junctions

“…In contrast, remnant polarization is known to retain its usefulness even when soft breakdown occurs. [ 136 ] As a result, securing the long‐term reliability of FTJs requires a different technique compared to conventional FeRAM or FeFET devices. Furthermore, it has been reported that the switching speed of ferroelectric polarization in HfZrO with a fluorite structure is in the sub‐nanosecond range.…”