High efficiency Schottky junction solar cells by co-doping of graphene with gold nanoparticles and nitric acid

Liu, X.; Zhang, X. W.; Meng, Jiaqi; Yin, Z. G.; Zhang, L. Q.; Wang, H. L.; Wu, Jiang

doi:10.1063/1.4922373

Cited by 54 publications

(29 citation statements)

References 23 publications

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“…Finally a top-contact to the Si-substrate is established by depositing Ag paste on the exposed areas of the wafer, opportunely scratched to guarantee ohmic contact. The characteristic graphene wrinkles extending across the edge of the trench from the isolated area 19 as well as on the Gr/Si junction area are visible. Gr layer covers the edge of the trench keeping its structural integrity and ensuring electrical contact between the junction area and the contact area on top of the isolation layer.…”

Section: Methodsmentioning

confidence: 99%

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

et al. 2017

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We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW −1 and a normalized detectivity higher than 3.5 × 10 12 cmHz 1/2 W −1 in the visible range. The device exhibits a photocurrent exceeding the forward current, because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. At room temperature, we measure a zero-bias Schottky barrier height of 0.52 eV, as well as an effectiveRichardson constant A**=4 × 10 −5 Acm −2 K −2 and an ideality factor n ≈ 3.6, explained by a thin (< 1nm) oxide layer at the Gr/Si interface.2

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Section: Methodsmentioning

confidence: 99%

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

et al. 2017

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“…[45][46][47][48][49][50] Among them, HNO 3 doping is deemed to be the most commonly used method. 60 Feng et al demonstrated that aer immersing the device in HNO 3 vapor for several seconds, ( Fig. 2a and b).…”

Section: The Optimization Of Graphene/si Solar Cellsmentioning

confidence: 99%

Graphene/Si Schottky solar cells: a review of recent advances and prospects

et al. 2019

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“…For the instability of chemical doping, many researchers tried to dope Gr with physical contact instead. Liu et al covered Gr with Au nanoparticles (NPs) with different sizes for p‐type doping . Together with nitric acid doping, they further enhanced the efficiency of Gr/Si solar cells to 10.2%.…”

Section: Engineering Gr/si Solar Cellsmentioning

confidence: 99%

“…The hole density grew steadily as work function of contacted metal nanoparticles increased, suggesting that work function of metal nanoparticles was the reason for physical doping. Kim et al doped Gr with Au nanoparticles and increased its work function by ≈0.15 eV . Doping with Au nanoparticles significantly reduced the ideal factor of Gr/Si solar cells from 3.39 to 1.52, suggesting a much better junction.…”

Section: Engineering Gr/si Solar Cellsmentioning

confidence: 99%

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

Huang

Cong

et al. 2018

Adv Materials Inter

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Solar cells fabricated with the most dominant material in industry, silicon (Si), developed rapidly in the recent years. Traditional Si solar cells require a complex process of fabricating junction. Thanks to its exotic electrical and optical properties, graphene (Gr) has attracted tremendous research interest in optoelectronic device applications, e.g., solar cells. The Gr/Si solar cell can be achieved by a simple room‐temperature transfer technique, which exhibits great potential application in photovoltaics. Currently, many researchers focus on the strategies to dope the Gr for the cell efficiency improvement, from 1.65% to 16.2%. Although great progress has been made, there are still some key issues to be solved on the way to the commercialization of Gr/Si solar cells. Here, the recent progress in the development of Gr/Si solar cells is comprehensively reviewed, and the road map of Gr/Si solar cell techniques in the future is discussed.

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High efficiency Schottky junction solar cells by co-doping of graphene with gold nanoparticles and nitric acid

Cited by 54 publications

References 23 publications

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Graphene/Si Schottky solar cells: a review of recent advances and prospects

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

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