High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Fetzer, C. M.; King, Richard R.; Colter, P. C.; Edmondson, K.; Law, D. C.; Stavrides, A.; Yoon, Hyoseok; Ermer, J.; Romero, Manuel J.; Karam, N.H.

doi:10.1016/j.jcrysgro.2003.11.026

Cited by 53 publications

(25 citation statements)

References 5 publications

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“…The 660 nm luminescence increases, as expected, as the beam enters the GaInP cell, decreases (but does not reach the background level) in the GaInAs middle cell, and then increases again in the BSF and TJ regions, which contain GaInP [7], before dropping to the background level in the Ge. An 880 nm signal is produced by excitation both in the GaInP as well as the GaInAs.…”

Section: Experimental Results: Cathodoluminescence and Near-fieldsupporting

confidence: 78%

“…High-resolution spectroscopy techniques are required to study these multilayer systems. While a majority of CL work on multijunction cells has focused on defect mapping [7], [8] or studies of radiation damage [9], [10], transport imaging has the potential to provide important corollary information and directly evaluate materials properties, image interface, and junction recombination behavior and observe and quantify luminescent coupling. …”

Section: Introductionmentioning

confidence: 99%

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Cross-sectional transport imaging in a multijunction solar cell

Haegel

Taha

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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Abstract-We combine a highly localized electron-beam point source excitation to generate excess free carriers with the spatial resolution of optical near-field imaging to map recombination in a cross-sectioned multijunction (Ga 0 .5 In 0 .5 P/GaIn 0 .01 As/Ge) solar cell. By mapping the spatial variations in emission of light for fixed generation (as opposed to traditional cathodoluminescence (CL), which maps integrated emission as a function of position of generation), it is possible to directly monitor the motion of carriers and photons. We observe carrier diffusion throughout the full width of the middle (GaInAs) cell, as well as luminescent coupling from point source excitation in the top cell GaInP to the middle cell. Supporting CL and near-field photoluminescence (PL) measurements demonstrate the excitation-dependent Fermi level splitting effects that influence cross-sectioned spectroscopy results, as well as transport limitations on the spatial resolution of conventional cross-sectional far-field measurements.

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Section: Experimental Results: Cathodoluminescence and Near-fieldsupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Cross-sectional transport imaging in a multijunction solar cell

Haegel

Taha

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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“…When TDD is lower than 10 5 cm −2 , the decreasing trend of η is not obvious, and the drastic drop occurs after TDD is beyond this critical value. According to the recent experiments [1][2][3][4][5][6][7][8][9], there is an approximate order of magnitude 10 5 -10 7 cm −2 of TD coming up to the device surface, which still greatly degrades the cell's performance as observed in Figure 4. Therefore, to maintain an expecting η, TDD in the MM system had better be reduced to less than 10 5 cm −2 , indicating a need of high quality buffer layer.…”

Section: Resultsmentioning

confidence: 99%

“…Generally, the proper buffer layer is inserted within the heteroepitaxial layers to relax the misfit strain and bury those defects under the active layers. Although huge efforts were made [1][2][3][4][5][6][7][8][9], there is still non-ignorable density of TD of the order 10 5 -10 7 cm −2 , propagating into the active layers. Thus, a competition between a high η of the MM structure and unexpected negative impaction brought by dislocation must be reconciled within the same configuration.…”

Section: Introductionmentioning

confidence: 99%

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

Zhang

Chen

Wang

et al. 2010

Sci. China Technol. Sci.

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The photovoltaic conversion efficiency for monolithic GaInP/GaInAs/Ge triple-junction cell with various bandgap combination (300 suns, AM1.5d) was theoretically calculated. An impressive improvement on conversion efficiency was observed for a bandgap combination of 1.708, 1.194, and 0.67 eV. A theoretical investigation was carried out on the effect of dislocation on the metamorphic structure's efficiency by regarding dislocation as minority-carrier recombination center. The results showed that only when dislocation density was less than 1.6×10 6 cm −2 , can this metamorphic combination exhibit its efficiency advantage over the fully-matched combination. In addition, we also briefly evaluated the lattice misfit dependence of the dislocation density for a group of metamorphic triple-junction system, and used it as guidance for the choice of the proper cell structure. tandem solar cell, theoretical efficiency, dislocation, buffer layers Citation: Zhang H, Chen N F, Wang Y, et al. Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells. Sci

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“…This direct and wide band gap spectrum makes the InGaN material system applicable for photovoltaic device design [4][5]. GaInP-GaInAs-Ge which has three junctions has a performance of %39, but structures containing InGaN has better efficiency [6][7]. SC with InGaN active layer is an important nanotechnology device which takes attention in recent years.…”

Section: Introductionmentioning

confidence: 99%

Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD

Bilgili¹,

Akpınar²,

Kurtuluş³

et al. 2018

Journal of Polytechnic

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Lattice parameters a-, c-, strain-stress analysis and thermal expansion coefficient of InGaN/GaN solar cell structures grown by MOCVD MOCVD ile büyütülen InGaN/GaN güneş hücresi yapısının a-,c-örgü parametreleri, zorlamagerilme analizi ve termal genleşme katsayısı Yazar(lar) (Author(s)) 0000-0003-3420-4936 ORCID 2 : : : : : 0000-0003-2953-1828 Bu makaleye şu şekilde atıfta bulunabilirsiniz(To cite to this article): Bilgili A.K., Akpinar O., Kurtulus G., Ozturk M.K., Ozcelik S. and Ozbay E., "Lattice parameters a-, c-, strain-stress analysis and thermal expansion coefficient of InGaN/GaN solar cell structures grown by MOCVD", Journal of Polytechnic, *(*): *, (*). (002), (004), (006) ve (121) düzlemleri için hesaplandı. HR-XRD'den elde edilen pik pozisyonlarının veri tabanlarındaki (database) pik pozisyonlarıyla neredeyse aynı olduğu görülmektedir. Hesaplamalardan elde edilen tüm sonuçlar bu çalışmanın bölümlerinde yer alan tablolarda verilmektedir. Bütün bu sonuçların farklı yazarlar tarafından yapılmış önceki eserlere ve gerçek değerlere uygun olduğu görülmektedir.

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High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Cited by 53 publications

References 5 publications

Cross-sectional transport imaging in a multijunction solar cell

Cross-sectional transport imaging in a multijunction solar cell

Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells

Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD

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