Conventional theory predicts that ultrahigh lattice thermal conductivity can only occur in crystals composed of strongly bonded light elements, and that it is limited by anharmonic three-phonon processes. We report experimental evidence that departs from these long-held criteria. We measured a local room-temperature thermal conductivity exceeding 1000 watts per meter-kelvin and an average bulk value reaching 900 watts per meter-kelvin in bulk boron arsenide (BAs) crystals, where boron and arsenic are light and heavy elements, respectively. The high values are consistent with a proposal for phonon-band engineering and can only be explained by higher-order phonon processes. These findings yield insight into the physics of heat conduction in solids and show BAs to be the only known semiconductor with ultrahigh thermal conductivity.

In this study, a control scheme for the stand-alone generation system based on brushless doubly-fed machine (BDFM) is presented. The output voltage amplitude and frequency are kept constant under variable rotor speed and load by regulating the amplitude and frequency of the control winding (CW) current of BDFM appropriately. The control scheme utilises a CW current vector controller as the inner loop, and a power winding voltage amplitude controller and a frequency controller as the outer loop. The proposed control scheme has been implemented on a prototype BDFM designed for the variable-speed stand-alone ship shaft generation application. Moreover, the satisfactory dynamic performance and low total harmonic distortion of the output voltage in the proposed stand-alone generation system is verified by experiments with two kinds of typical loads: three-phase induction motor load and three-phase RL inductive load.

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The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density Dit(E) and the total interface charge Qtot. Furthermore, the bonding configuration variation of the AlOx films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlOx tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlOx layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.