High-efficiency (&gt;20% AM0) GaAs solar cells grown on inactive-Ge substrates

Iles, P. A.; Yeh, Y. C. M.; Ho, F.; Chu, C.; Cheng, C. C.

doi:10.1109/55.61775

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Cited by 63 publications

(15 citation statements)

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“…GaAs/Ge heterostructures have received a great deal of attention due to their possible application in many electronic and optoelectronic devices, such as bipolar transistors [1], phototransistors [2], and high, efficiency solar cells [3]. The high quality of GaAs films grown on Ge substrates is crucial for the performance of these devices.…”

Section: Introductionmentioning

confidence: 99%

Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

Chen

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

Chen

et al. 2007

Journal of Crystal Growth

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“…GaAs/Ge heterostructures have received considerable attention for space power application [1][2][3][4][5][6] and recently for light-emitting diodes and laser diodes, 7,8 as the lattice constant and thermal expansion coefficient of GaAs and Ge are nearly matched. The GaAs/Ge material system has many advantages over GaAs/GaAs.…”

Section: Introductionmentioning

confidence: 99%

The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge

Tyagi

Singh

Thirumavalavan

et al. 2002

J. Electron. Mater.

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GaAs epilayers were grown on Ge by metal-organic chemical vapor deposition (MOCVD) with As or Ga prelayers. The grown epilayers were examined for surface morphology, antiphase domain (APD) presence, and optical quality using optical interference contrast microscopy, molten potassium hydroxide (KOH) etching, and photoluminescence (PL) spectroscopy. The As prelayer results in smooth, shiny, and APD-free epilayers with good optical quality. In contrast, the Ga prelayer results in a rough surface with APDs and higher carbon incorporation.

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“…3 The high quality of GaAs films grown on Ge substrates is crucial for the performance of these devices. Several growth techniques have been used to achieve this goal.…”

Section: Introductionmentioning

confidence: 99%