The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge

Abstract

GaAs epilayers were grown on Ge by metal-organic chemical vapor deposition (MOCVD) with As or Ga prelayers. The grown epilayers were examined for surface morphology, antiphase domain (APD) presence, and optical quality using optical interference contrast microscopy, molten potassium hydroxide (KOH) etching, and photoluminescence (PL) spectroscopy. The As prelayer results in smooth, shiny, and APD-free epilayers with good optical quality. In contrast, the Ga prelayer results in a rough surface with APDs and higher carbon incorporation.

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

“…The growth of a high quality III-V nucleation layer usually begins with exposure of the Ge(100) surface to group V precursors after high temperature annealing [6][7][8][9]. Particularly, P termination of the Ge surface should be obtained prior to nucleation for state-of-the-art GalnP on Ge heteroepitaxy in MOVPE [10,11].…”

Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate

“…The ratio of the flow rate (measured in sccm) of TMGa to that of TBAs is 15:1. 22 Top view inspection of the as-grown GaAs on Ge fins was performed using SEM, as shown in Fig. 2(b).…”

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques

“…an As layer pre-deposition, to achieve a single-domain surface [9][10] and (3) sample C, grown using the full routine. In addition samples D and E were grown in the same way as sample B, but in each case a thicker GaAs overlayer was produced (see Figure 1).…”

“…(i) use of a 6 o offcut Ge substrate to provide a double-step surface [6][7][8], (ii) forming a single domain surface using an As pre-layer prior to the deposition of a GaAs nucleation layer [9][10], or (iii) double-step growth -deposition of a GaAs nucleation layer at a lower or higher temperature to that of a GaAs buffer layer [11][12][13].…”