Research of surface morphology in Ga(In)As epilayers on Ge grown by MOVPE for multi-junction solar cells

The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD – Application to a 200mm GaAs virtual substrate

“…Microscope inspection revealed the presence of surface pits, which is the characteristic of anti-phase boundaries (APB). The surface pits of sample A (Figure 2b) and B look similar to the results of Wu et al [23].…”

“…There are contradictory reports in the literature about the optimized V/III ratio for the GaAs buffer layer growth [13,19,20,23]. Values ranging from 12 up to 120 have been reported.…”

Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

“…Heterogeneous integration of semiconductor material GaAs on Ge substrate has received considerable attentions for the possible applications in various microelectronic and optoelectronic devices [1][2][3][4], such as multi-junction solar cells, complementary metaloxide-semiconductor (CMOS), and bipolar transistors. The high quality GaAs films grown on Ge substrates are crucial important for the performances of these devices.…”