High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

Yarekha, Dmitri; Vicet, A.; Pérona, A.; Glastre, G.; Fraisse, Bernard; Rouillard, Y.; Skouri, E. M.; Boissier, G.; Grech, P.; Joullié, A.; Alibert, C.; Баранов, А. Н.

doi:10.1088/0268-1242/15/4/314

Cited by 22 publications

(7 citation statements)

References 14 publications

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“…Consequently, holes are confined in a nearly triangular potential close to the QW interfaces, and their presence probability near the quantum well is strongly increased so that the electron-hole wavefunction overlap becomes important. In these conditions, the reported good performance from type-II GaInAsSb/GaSb QW lasers are not surprising [19,22,[63][64][65][66][67].…”

Section: Type-ii Gainassb/gasb Laser Diodesmentioning

confidence: 80%

“…Besides, the possibility of growing strained layers by MBE offers matter for imagining and fabricating complex but high-performing laser structures. In 2000, four III-V laser technologies have emerged in this way for laser emission in the mid-infrared: (i) interband lasers including in their active zone GaInAsSb/AlGaAsSb type-I or GaInAsSb/GaSb type-II quantum wells (QWs) [15][16][17][18][19][20][21][22]; (ii) type-III 'W' lasers based on the InAs/GaInSb system [23][24][25][26]; (iii) quantum cascade lasers (QCLs) which employ conduction intersubband radiative transitions in the GaInAs/AlInAs system [27][28][29][30][31][32][33]; and (iv) interband quantum cascade lasers (ICLs) which associate interband transitions and cascade effect in the type-III InAs/GaInSb system [34][35][36]. Excellent performance was obtained in pulsed regime at room temperature or near room temperature from these different technologies.…”

Section: Introductionmentioning

confidence: 99%

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GaSb-based mid-infrared 2–5 μm laser diodes

Joullié¹,

Christol

2003

Comptes Rendus. Physique

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Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2-5 µm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0-2.6 µm wavelength range. Beyond 2.6 µm, type-II GaInAsSb/GaSb QW lasers, type-III 'W' InAs/GaInSb lasers, and interband quantum cascade lasers employing the InAs/Ga(In)Sb/AlSb system, all based on GaSb substrate, are competitive technologies to reach the goal of room temperature CW operation. These different technologies are discussed in this paper. To cite this article: A.

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Section: Type-ii Gainassb/gasb Laser Diodesmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

GaSb-based mid-infrared 2–5 μm laser diodes

Joullié¹,

Christol

2003

Comptes Rendus. Physique

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“…In order to improve the quality of the QW/barrier stacks, the sequence of MBE shutters was optimized after detailed RHEED (Reflection of High Energy Electron Diffraction) investigations. They were based-on the study of RHEED specular beam intensity behavior, as described in [6] and taking care of the aluminum presence in the barriers.…”

Section: Fabrication and Test Of The Active Epitaxial Layersmentioning

confidence: 99%

Vertical Cavity Surface Emitting Laser sources for gas detection

Cerutti

Garnache

Ouvrard

et al. 2005

Physica Status Solidi (a)

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The molecular beam epitaxy growth conditions of a GaInAsSb/AlGaAsSb multi-quantum wells stack have been successfully optimised. This included minimising the full-width at half-maximum of the high resolution X-ray diffraction satellites and maximising the photoluminescence peak intensity collected at room temperature. Then, the optimised gain structures were successfully inserted in a) a microcavity and b) an external-cavity Vertical Cavity Surface Emitting Laser. In both cases, room temperature laser operation near 2.3 µm in the continuous wave regime, with a circular single transverse mode output beam, was demonstrated. An output power larger than 1 mW at room temperature was measured.

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“…as semiconductor lasers with wavelengths in the blue and ultraviolet as well as various electronic devices designed to work at elevated operating temperatures. As is well known, ZnO/GaN heterostructures have been studied extensively for device applications such as photodetectors and intersubband lasers using these structures have been successfully developed [2][3][4][5][6]. In addition, CdSe quantum dots capped with ZnS [7] and CdS quantum dots themselves may be functionalized with biomolecules and may be used as biological tags [8].…”

Section: Introductionmentioning

confidence: 99%

Thornber–Feynman carrier-optical-phonon scattering rates in wurtzite crystals

Singh

Dutta²,

Stroscio³

2020

J. Phys.: Condens. Matter

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It is well known that the carrier-optical-phonon scattering rates dominate the carrier-acoustic-phonon scattering rates in many polar materials of interest in electronic and optoelectronic applications. Furthermore, it is known that the Fröhlich coupling constants for carrier-optical-phonon in many materials is close to or great than unity, calling into question the validity of scattering rates based on the Fermi golden rule. In a celebrated paper by Thornber and Feynman it was shown that that the large Fröhlich coupling constant in polar materials does indeed lead to substantial corrections to the Fermi golden rule scattering rates. These large corrections are due to the fact that for strong coupling constants, the first-order perturbative approach underlying the Fermi golden rule does not take into account the presence of many phonons interacting simultaneous with the carrier. In this paper, the Thornber–Feymnan scattering rates for carrier-optical-phonon interactions are derived for several technologically important wurtzite semiconductors—BN, ZnO, CdS, CdSe, ZnS, InN, and SiC- and it is shown that the commonly used Fermi golden rule scattering rates must be corrected by factors ranging up to an order-of-magnitude. The corrections to the Fermi golden rule reported herein have widespread impact on carrier transport for materials with large Fröhlich coupling constants.

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High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers

Cited by 22 publications

References 14 publications

GaSb-based mid-infrared 2–5 μm laser diodes

GaSb-based mid-infrared 2–5 μm laser diodes

Vertical Cavity Surface Emitting Laser sources for gas detection

Thornber–Feynman carrier-optical-phonon scattering rates in wurtzite crystals

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