GaSb-based mid-infrared 2–5 μm laser diodes

Joullié, A.; Christol, Philippe

doi:10.1016/s1631-0705(03)00098-7

Cited by 77 publications

(47 citation statements)

References 94 publications

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“…Both COMSOL simulations and 6 × 6 k.p calculations [16] confirm that the ground heavy hole (GHH) state was the only confined energy state within QDs of base radius 1.25-3 nm. For both pure InSb QDs (~1.25 nm) and larger InAs0.6Sb0.4 QDs (~3 nm), the electron-hole wave function overlap lies within the range 35%-40% (using both simulation methods), which is lower than in type I QDs and W-structures [18,19]. However, due to the high QD density, an exceptionally high material gain of ~20 × 10 4 cm −1 can be estimated for our type II QD, which is in the same range as for type I QDs [13].…”

Section: Gain From Insb Qdsmentioning

confidence: 87%

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Zhuang

Krier

2015

Photonics

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Abstract:In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm −1 per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

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Section: Gain From Insb Qdsmentioning

confidence: 87%

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Zhuang

Krier

2015

Photonics

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“…They have used various structures such as photodiodes (PD), light source/ detector (LED/PD) pair. Material systems have used to grow such predominantly based on type-II InAs/GaSb superlattice (T2SL), mercury cadmium telluride (MCT) and extended indium gallium arsenide (InGaAs) and quaternary InGaAsSb materials [3]. Among them, the InGaAsSb material system have been developed for IR-LED and PD.…”

Section: Introductionmentioning

confidence: 99%

MID-Infrared Light Emitting Diode Based on InGaAsSb/AlGaAsSb Quantum Well for Gas Sensor Applications

Nguyen¹,

Kim²,

Kim³

et al. 2017

Proceedings of the 2017 Asia International Conference on Quantitative InfraRed Thermography

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In this study, we present the device performance of dual color infrared light emitting diode (IR-LED) based on InGaAsSb/AlGaAsSb quantum well structure. The LED sample was grown on n-type GaSb substrate using the molecular beam (MBE) with As 2 and Sb 2 cracker cells. The active layer of device structure consists of three different quantum well widths (5, 10 and 15 nm) of InGaAsSb and a 200 nm thick Al 0.35 Ga 0.65 As 0.03 Sb 0.97 barrier. The structural and electrical characterization of LED sample was measured by high-resolution X-ray diffractometer (HR-XRD) and current-voltages (I-V). The LED sample was processed by the conventional photolithographic technique. By using the e-beam evaporation system, ohmic contact was formed on the p-and n-type of the layer.The electroluminescence (EL) of the device was observed 1.94 and 2.1 ㎛ at room temperature.

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“…The epitaxial technology of antimonides on GaSb finds application in several electronic and optoelectronic devices such as lasers, detectors or photo− and thermo− voltaic cells [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. While for other III−V materials, two main epitaxial techniques − MBE and MOCVD − usually enable the pro− duction of the layers with comparable quality, in the case of antimonides on GaSb, MBE currently yields better material than MOCVD.…”

Section: Introductionmentioning

confidence: 99%

“…While for other III−V materials, two main epitaxial techniques − MBE and MOCVD − usually enable the pro− duction of the layers with comparable quality, in the case of antimonides on GaSb, MBE currently yields better material than MOCVD. This is of special concern for the realisation of lasers [1][2][3][4][5][6][7][8], where the deficiency of stable antimony hydride precursor contributes to high oxygen and carbon contamination of aluminium containing layers [9]. On the other hand, MOCVD presents benefits such as lower pro− duction cost, which stimulates research in this field.…”

Section: Introductionmentioning

confidence: 99%

Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

Wesołowski

Strupiński

Motyka

et al. 2011

Opto-Electronics Review

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The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-developed, while MOVPE method is still being improved. It is known that the principal problem for MOVPE is the oxygen and carbon contamination of aluminium containing waveguides and claddings. The solution would be to apply a proper aluminium precursor. In this study we present the results of metal-organic epitaxy of In- and Al-containing layers and quantum well structures composing antimonide lasers devices. Special emphasis was put on the aluminium precursor and its relation to AlGaSb and AlGaAsSb materials properties. The crystalline quality of the layers grown with two different Al precursors was compared, very good structural quality films were obtained. The results suggested a substantial influence of precursors pre-reactions on the epitaxial process. The oxygen contamination was measured by SIMS, which confirmed its dependence on the precursor choice. We also optimised the GaSb substrate thermal treatment to deposit high quality GaSb homoepitaxial layers. Quaternary InGaAsSb layers were obtained even within the predicted miscibility gap, when arsenic content reached high above 10% values. InGa(As)Sb/AlGa(As)Sb quantum wells were grown and their optical properties were characterised by photoluminescence and photoreflectance spectroscopy. Type-I quantum wells showed a fundamental optical transition in the 1.9–2.1 μm range at room temperature. The epitaxial technology of the structures was subjected to an optimisation procedure. The investigated layers and heterostructures can be considered for application in laser devices.

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GaSb-based mid-infrared 2–5 μm laser diodes

Cited by 77 publications

References 94 publications

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

MID-Infrared Light Emitting Diode Based on InGaAsSb/AlGaAsSb Quantum Well for Gas Sensor Applications

Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

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