MID-Infrared Light Emitting Diode Based on InGaAsSb/AlGaAsSb Quantum Well for Gas Sensor Applications

Abstract

In this study, we present the device performance of dual color infrared light emitting diode (IR-LED) based on InGaAsSb/AlGaAsSb quantum well structure. The LED sample was grown on n-type GaSb substrate using the molecular beam (MBE) with As 2 and Sb 2 cracker cells. The active layer of device structure consists of three different quantum well widths (5, 10 and 15 nm) of InGaAsSb and a 200 nm thick Al 0.35 Ga 0.65 As 0.03 Sb 0.97 barrier. The structural and electrical characterization of LED sample was measured by high-resolution X-ray diffractometer (HR-XRD) and current-voltages (I-V). The LED sample was processed by the conventional photolithographic technique. By using the e-beam evaporation system, ohmic contact was formed on the p-and n-type of the layer.The electroluminescence (EL) of the device was observed 1.94 and 2.1 ㎛ at room temperature.