High-efficiency CW and passively Q-switched operation of a 2050 nm L-shaped Tm3+:Y2O3 ceramic laser in-band fiber-laser pumped at 1670 nm

High efficiency in-band pumped Tm- and Ho-doped 2-μm solid-state lasers

“…The in-band pumping of the 3 H6-3 F4 Tm 3+ -ion transition enables the high-efficiency and high-power operation of Tm 3+ -doped lasers at 1900-2100 nm with a low quantum defect [12][13][14][15][22][23][24][25][26][27]. Direct excitation of Tm 3+ ions into the upper laser level 3 F4 results in the reduced thermal load and high laser efficiency compared to the diode pumping into 3 H4 level with the cross relaxation ( 3 H4, 3 H6) → ( 3 F4, 3 F4).…”

“…3.2. CW and QCW operations of in-band pumped Tm 3+ :Y2O3 ceramic lasers at 2050 nm Schematic of the Tm 3+ :Y2O3 ceramics laser with the L-shaped cavity was the similar as for the Tm 3+ :Lu2O3 ceramics laser (Figure 3) [12]. A Y2O3 ceramic rod with the 6.0 mm diameter and 16 mm length was doped with 1 at.…”

“…In this paper an overview of our recent achievements in the 2-μm solid-state lasers based on Tm 3+doped ceramics (Lu2O3 or Y2O3) or YAP crystals in-band pumped by a fiber laser at 1670 nm is reported [12][13][14][15]. Different operation modes (CW, actively or passively Q-switch) of our lasers are described.…”

CW and Q-switched operations of a Tm3+:YAP laser at 1892–1994 nm In-band fiber-laser pumped at 1670 nm

“…Direct excitation of Tm 3+ ions into the upper laser level 3 F 4 results in the reduced thermal load and high laser efficiency compared to the diode pumping into 3 H 4 level with the subsequent cross relaxation ( 3 H 4 , 3 H 6 ) → ( 3 F 4 , 3 F 4 ) of the Tm 3+ ions with phonon assistance (figure 1). The high-efficiency lasers and amplifiers based on Tm 3+ :YLF or Tm 3+ :CaGdAlO 4 crystals, and Tm 3+ :YAG, Tm 3+ :Lu 2 O 3 or Tm 3+ :Y 2 O 3 ceramic with the in-band pumping at 1615 nm and 1670-1678 nm were recently reported in a number of papers [13][14][15][16][17][18][19][20]. The 2 µm lasers based on the highly-Tm 3+ -doped YAG, YAP and YLF crystals with 1695 nm diode pumping were also presented [21].…”

“…The in-band pumping of the 3 H 6 -3 F 4 Tm 3+ -ion transition enables the high-efficiency and high-power operation of Tm 3+ -doped lasers at 1900-2100 nm with a low quantum defect [12][13][14][15][16][17][18][19][20]. Direct excitation of Tm 3+ ions into the upper laser level 3 F 4 results in the reduced thermal load and high laser efficiency compared to the diode pumping into 3 H 4 level with the subsequent cross relaxation ( 3 H 4 , 3 H 6 ) → ( 3 F 4 , 3 F 4 ) of the Tm 3+ ions with phonon assistance (figure 1).…”