High-Efficiency CMOS RF-to-DC Rectifier Based on Dynamic Threshold Reduction Technique for Wireless Charging Applications

Mohamed, Manal M.; Fahmy, Ghazal A.; Abdel‐Rahman, Adel B.; Allam, Ahmed; Barakat, Adel; Abo‐Zahhad, Mohammed; Jia, Hongting; Pokharel, Ramesh K.

doi:10.1109/access.2018.2866457

Cited by 26 publications

(19 citation statements)

References 23 publications

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“…The CNTFET rectifier architecture used Stanford CNTFET model for the simulations. Power conversion efficiency (PCE) and voltage conversion efficiency (VCE) as given in Eq (13) and (14) describes the rectifier circuit's performance. 13) (14An RF input signal with 953MHz frequency is given to the rectifier architecture with 10 kΩ load resistor.…”

Section: Resultsmentioning

confidence: 99%

“…Many earlier rectifier topologies were given and discussed with their own pros and cons. Power dissipation because of threshold voltage is high in CMOS technology [7][8][9][10][11][12][13][14]. Previous research works of authors also described rectifier architectures based on carbon nanotube FET (CNTFET) technology for low power applications [20,23].…”

Section: Revised Manuscript Received On October 15 2019mentioning

confidence: 99%

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High Efficiency RF Energy Harvesting CNTFET Rectifier for Bio-implants Applications

Khan*,

Hasan

2019

IJEAT

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Carbon nanotube field effect transistor (CNTFET) based full wave rectifier given in the paper, works efficiently in the range of radio frequency. The CNTFET offers extremely less power loss and high through-put because of its high conducting properties. The Complementary Metal Oxide Semiconductor (CMOS) based studies are available but CNTFET based studies are rarely available. Therefore, CNTFET based rectifier has been used for the replacement of CMOS based rectifier architecture. The full wave rectifier circuit was analyzed using 32nm CNTFET Stanford model. An additional circuit of clampers is also used for introducing a negative DC level. Introduced negative DC signal further negated RF input signal and combined signal used for biasing the p type device during its conduction cycle. The CNTFET based rectifier with clamper circuit decreases the effective threshold voltage of switching p CNTFETs. The circuit resulted better RF input sensitivity of the transistor. Results show that 77.7% power conversion efficiency is suitable for powering up the bio-implantable devices.

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Section: Resultsmentioning

confidence: 99%

Section: Revised Manuscript Received On October 15 2019mentioning

confidence: 99%

High Efficiency RF Energy Harvesting CNTFET Rectifier for Bio-implants Applications

Khan*,

Hasan

2019

IJEAT

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“…Therefore, the lower efficiency of the rectifier can reduce the overall system efficiency of the WPT. To overcome this challenge several application specific integrated circuit (ASIC)-based high efficiency rectifiers have been proposed in offering 93.6% [103], 87% [104] and 86% [105] efficiencies for MIDs.…”

Section: System Designmentioning

confidence: 99%

Wireless Power Transfer Techniques for Implantable Medical Devices: A Review

Khan

Pavuluri

Cummins

et al. 2020

Sensors

204

109

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Wireless power transfer (WPT) systems have become increasingly suitable solutions for the electrical powering of advanced multifunctional micro-electronic devices such as those found in current biomedical implants. The design and implementation of high power transfer efficiency WPT systems are, however, challenging. The size of the WPT system, the separation distance between the outside environment and location of the implanted medical device inside the body, the operating frequency and tissue safety due to power dissipation are key parameters to consider in the design of WPT systems. This article provides a systematic review of the wide range of WPT systems that have been investigated over the last two decades to improve overall system performance. The various strategies implemented to transfer wireless power in implantable medical devices (IMDs) were reviewed, which includes capacitive coupling, inductive coupling, magnetic resonance coupling and, more recently, acoustic and optical powering methods. The strengths and limitations of all these techniques are benchmarked against each other and particular emphasis is placed on comparing the implanted receiver size, the WPT distance, power transfer efficiency and tissue safety presented by the resulting systems. Necessary improvements and trends of each WPT techniques are also indicated per specific IMD.

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“…Another Dickson charge pump based rectifier with improved performance in two configurations are presented which works in GSM band with a satisfactory PCE [7]. Also dynamic threshold reduction technique based CMOS rectifier has been designed with the use of a clamper to reduce the effective threshold voltage and increase the sensitivity and hence achieving a high PCE [8]. A coplanar waveguide based compact RF rectifier has been proposed in [9], which claims to achieve a peak PCE of 74.8% at 10dBm in the frequency range of 0.1 to 2.5GHz.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Modified TG Rectifier with Substrate Voltage Compensation Techniques at 45 nm Technology for High Frequency Low Power RF Energy Harvesting

Sarma

2020

Wseas Transactions on Electronics

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- The development of latest generation of wireless communication standards in the recent years has created enormous possibility to deploy high speed wireless network throughout the globe. There is always demand for high speed, seamless data connectivity. But it is a well-known fact that the increase in speed always makes the power consumption higher. Also while attempting to cater to the need of connectivity to a remote location, the major bottleneck is the availability of power. Hence incorporating self-sustainability to a wireless network is becoming the need of the hour. Radio frequency (RF) energy harvesting (EH) is gaining much attention in contemporary communications in this context. In the design of an EH system, the high frequency rectifier plays a significant role. Apart from several design hurdles that exist in a high frequency rectifier, to attain a high percentage conversion efficiency (PCE) at lower input power is the primary design challenge. This paper presents a design of a modified transmission gate (TG) based high frequency rectifier with two substrate voltage compensation techniques, viz. capacitor and MOS based compensation for RF EH system.The proposed capacitor and MOS based techniques enable the rectifier to achieve a PCE upto 86% and 92% at -5dBm respectively in its single stage implementation. This can be claimed to be the highest in-class efficiency as compared to recently published works. The frequency responses with both the techniques depict a wide band performance covering all popular wireless bands. The dynamic power dissipations (DPD) observed are 12nW and 16nW at -5dB, whereas the leakage power (LP) is 20x10-51W and zero respectively. Further such an performance are obtained using minimal number of transistors, viz. 4 and 5 respectively.

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High-Efficiency CMOS RF-to-DC Rectifier Based on Dynamic Threshold Reduction Technique for Wireless Charging Applications

Cited by 26 publications

References 23 publications

High Efficiency RF Energy Harvesting CNTFET Rectifier for Bio-implants Applications

High Efficiency RF Energy Harvesting CNTFET Rectifier for Bio-implants Applications

Wireless Power Transfer Techniques for Implantable Medical Devices: A Review

Design and Analysis of a Modified TG Rectifier with Substrate Voltage Compensation Techniques at 45 nm Technology for High Frequency Low Power RF Energy Harvesting

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