IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers
DOI: 10.1109/mcs.1993.247486
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High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone

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Cited by 7 publications
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“…There has been a tremendous insertion of HBTs as power amplifiers in the past 24 months in their L-band region due to the low-voltage power supply, high power-added efficiency, and high linearity. [1][2][3][4][5][6] HBTs offer circuit manufacturers performance and excellent process yield, which translate into significant cost advantages.…”
Section: Introductionmentioning
confidence: 99%
“…There has been a tremendous insertion of HBTs as power amplifiers in the past 24 months in their L-band region due to the low-voltage power supply, high power-added efficiency, and high linearity. [1][2][3][4][5][6] HBTs offer circuit manufacturers performance and excellent process yield, which translate into significant cost advantages.…”
Section: Introductionmentioning
confidence: 99%