High dose rate hydrogen plasma ion implantation

Qin, Shu; Bernstein, J.D.; Chan, Chung; Shao, Jiqun; Denholm, S.

doi:10.1016/0257-8972(96)02887-3

Cited by 8 publications

(3 citation statements)

References 14 publications

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“…The modifications of surface layer such as creation of planar defect or bubble as well as blistering and exfoliation were characterized using transmission electron microscopy (TEM) on a JEOL 200CX microscope. Spectroscopic ellipsometry measurements were performed on a SOPRA apparatus with four angles of incidence ranging from 66 to 78°, on the [0.2–1.2] µm wavelength spectral range—corresponding to1–6 eV energy range—with 0.01 µm step.…”

Section: Experimental Partmentioning

confidence: 99%

“…Plasma‐based ion implantation (PBII) approaches are of the particular interest. Indeed, PBII has been developed to circumvent the limitations of conventional ion implantation such as the requirement of a sophisticated target manipulation and beam raster when treating objects of complicated shape3 and it is a potential low cost solution for the 300 nm silicon wafer technology 4. With in‐line implantation, a large number of (111) and (100) platelet defects can be created in the crystalline silicon with the presence of a large amount of hydrogen 5…”

Section: Introductionmentioning

confidence: 99%

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A Comparison of the Hydrogen Incorporation Mechanisms Observed in Plasma, In-line Implantation and PBII Treatments

Arab¹,

David²,

Drouet³

et al. 2007

Plasma Process. Polym.

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Hydrogen was incorporated in silicon by plasma‐based ion implantation (PBII) with 20 kV high voltage acceleration. Samples treated by hydrogen plasma and by in‐line implantation (H 2+, 30 kV) were performed in order to evidence the specific effects promoted by the PBII. Plasma treatments did not induce any significant change in the silicon. With in‐line implantation, only classical defects can be observed in the silicon around the ion projected range. Post‐annealing is needed to obtain the formation of platelets. On the contrary, bubbles and platelets can be observed immediately after PBII implantation. With the highest doses, no post‐annealing is needed to form blisters and cavities, because of the heating due to the PBII treatment.

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Section: Experimental Partmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Comparison of the Hydrogen Incorporation Mechanisms Observed in Plasma, In-line Implantation and PBII Treatments

Arab¹,

David²,

Drouet³

et al. 2007

Plasma Process. Polym.

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“…It is in a biaxially oriented form, is a hard, stiff and strong material and has good gas barrier properties and good chemical resistance except to alkalis, which will hydrolyse it. o o -tocHjCHjO-i -\~j-l to [6,109,[149][150][151], N [8,27,129,152] and H [95,153,154]. In using a metal cathodic arc source, PHI technique is extended to metal PHI (MePIII) with a range of metals i.e.…”

Section: Introductionmentioning

confidence: 99%

Plasma immersion ion implantation on polymers

Sze¹

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2.1 MODIFICATION OF POLYMERS BY PIIID 11 2.1.1 Polymer structure 12 2.2 SURFACE COMPOSITION OF ION MODIFIED POLYMERS 13 2.3 ION-POLYMER INTERACTIONS 15 2.4 THERMAL SPIKES IN ION IMPLANTATION OF POLYMERS 18 2.5 ELECTRONIC TRANSPORT MECHANISM OF ION MODIFIED POLYMERS 23 2.6 PLASMA IMMERSION ION IMPLANTATION (PHI) 25 2.6.1 Description of the PHI system 28 111 ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library 2.6.2 Plasma immersion ion implantation for insulating materials 2.6.2.1 Rise time and ion energy range in PHI 2.6.2.2 Sputtering process 2.6.2.3 Determination of ion energies and incident ion dose rate 2.6.2.4 Charging effects on an insulator's surface 2.6.2.5 Design of experimental setup for insulators 2.6.2.6 Pulse frequency and duration 2.7 CATHODIC ARC SOURCES 2.7.7 Filtered cathodic vacuum arc system 39 2.7.2 Metal cathodic arc source 42 2.8 SUMMARY 43 CHAPTER 3: CHARACTERIZATION TECHNIQUES 44 3.1 VISIBLE RAMAN SPECTROSCOPY 45 3.2 X-RAY PHOTOELECTRON SPECTROSCOPY (XPS) 46 3.3 SCANNING ELECTRON MICROSCOPY (SEM) 47 3.4 X-RAY DIFF ACTION (XRD) 48 3.5 SURFACE PROFILER 49 3.6 CONDUCTIVE ATOMIC FORCE MICROSCOPY (CAFM) 49 3.7 MECHANICAL TESTING 52

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