High deposition rate amorphous and polycrystalline silicon materials using the pulsed plasma and “Hot-Wire” CVD techniques

Madan, A.; Morrison, S.

doi:10.1016/s0927-0248(98)00053-1

Cited by 26 publications

(10 citation statements)

References 8 publications

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“…In the discrete-sectional model, the aerosol size spectrum is divided into two regimes: discrete-size regime (DSR) and sectional-size regime (SSR) [13,16]. The governing equation for volume concentration, q i , of i-mers (i=1 to imax) in DSR can be expressed as follows [10,12]: (1) In Eq. (1), the first term in right hand side (RHS) is the generation rate of q 1 for monomers.…”

Section: Theorymentioning

confidence: 99%

“…For example, a low pressure operation can be a possible method for preparing high quality thin films by reducing the particle contamination, but this method has a disadvantage in the slow deposition rate. According to recent reports, the pulsed plasma process can be a relatively simple method for preparing high quality thin films by reducing the particle contamination at a high deposition rate, compared with the continuous-wave plasma at low pressure operation [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…During t off , all electrons disappear and there is no more generation of radicals and ions by electron collision. The pulse repetition can reduce the concentration of precursors (radicals, or ions) for particle generation and growth in the pulsed plasmas, compared with those in the continuous-wave plasmas [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Effect of pulse modulation on particle growth during SiH4 plasma process

Kim

2008

Korean J. Chem. Eng.

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The effects of pulse modulation on particle growth by coagulation between particles in a pulsed SiH 4 plasma reactor were analyzed by using a discrete-sectional method. At the start of the plasma discharge, there is high concentration of small-sized particles, and, later, the large-sized particles appear and grow by coagulation between smallsized particles. During plasma-off, the monomer generation stops and the particle concentration decreases with time by the effects of particle coagulation and fluid flow. As the pulse frequency decreases or as the duty ratio increases, the large-sized particles grow faster because more monomer particles are generated during longer plasma-on time. These results show that the pulse modulation, the changes of pulse frequency and duty ratio, can play a key role in suppressing the particle growth in the pulsed plasma process efficiently. This study proves that the pulsed plasma process can be applied to reduce the particle contamination in the plasma process for preparation of high quality thin films.

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Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of pulse modulation on particle growth during SiH4 plasma process

Kim

2008

Korean J. Chem. Eng.

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“…Those values are promising in photovoltaics industry for polycrystalline silicon solar cell. On the other hand, the thin film amorphous silicon and polycrystalline silicon were prepared with a high deposition rate by pulsed plasma and Hot-Wire CVD techniques [12] and hot wire cell method [13] (deposition rates of 1.2 nm/s). That means that the solar cell formed by P + thin film amorphous silicon and N + polycrystalline silicon can be fabricated and that the cost will be less than other cells.…”

Section: Introductionmentioning

confidence: 99%

Simulation of high conversion efficiency and open-circuit voltages of α-si/poly-silicon solar cell

Chen

Shao

2011

Sci. China Phys. Mech. Astron.

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The P + α-Si /N + polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device, and the thickness of N + poly-silicon, we consider the impurity concentration in the N + poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N + polysilicon had little impact on the device when the thickness varied from 20μm to 300μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltages (Voc) of P + α-Si /N + polycrystalline solar cell is very high reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P + α-Si/N + poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.

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“…Cat-CVD offers several features that overcome some of the PECVD limitations, as an absence of ion bombardment during deposition, high deposition rate, and low maintenance costs. This technique has been expanding for a great variety of suitable materials for electronic device applications [8][9][10][11]. Furthermore, approaches to obtain a-Si:O x :H deposition has been made using this technique [12,13] deposition feasibilities are presented with its correspondent electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%