Simulation of high conversion efficiency and open-circuit voltages of α-si/poly-silicon solar cell

Abstract

The P + α-Si /N + polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device, and the thickness of N + poly-silicon, we consider the impurity concentration in the N + poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N + polysilicon had little impact on the device when the thickness varied from 20μm to 300μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltages (Voc) of P + α-Si /N + polycrystalline solar cell is very high reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P + α-Si/N + poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.