High-Density MIM Capacitors With Porous Anodic Alumina Dielectric

Hourdakis, E.; Nassiopoulou, A. G.

doi:10.1109/ted.2010.2058350

Cited by 36 publications

(17 citation statements)

References 28 publications

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“…Sensitivity to frequency is low compared to the earlier reports at 2S o C [3,11] as shown in Table 1.…”

Section: Temperature Dependent Capacitancecontrasting

confidence: 58%

“…Anodic oxidation or anodization is an attractive and reliable high-k oxide growth technology for high quality metal insulator-metal (MIM) capacitors which has been reported by many authors recently [1][2][3][4]. This inexpensive anodization process has many advantages such as low defect profile, improved ionic polarization and low leakage which are main quality measures of dielectric materials to meet the challenges of International Technology Roadmap for Semiconductors (ITRS) [5].…”

Section: Imentioning

confidence: 99%

“…In[3], the fabricated porous anodic oxide MIM capacitor results in reduced breakdown field and high sensitivity to the frequency which indicates the sign of high defect/trap density at the interface and bulk because of solubility in the electrolyte during anodization. ALD and barr ier type anodic MIM capacitors exhibit excellent reliability and high capacitance density.…”

mentioning

confidence: 97%

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Temperature and stress dependent properties of barrier type anodic Al<inf>2</inf>O<inf>3</inf> MIM capacitor

Kannadassan

Karthik

Mallick

et al. 2012

2012 International Conference on Emerging Electronics

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This paper presents a high-k barrier type anodic AI 2 03 Metal-Insulator-Metal (MIM) capacitor for mixed signalJRF applications. The anodic oxide MIM capacitor shows high capacitance density of 6.01fFJllm 2 and low voltage coefficient of capacitance less than 500ppmlV. Due to reduced defect density and improved polarization, the capacitor exhibits variability of less than 6% in the frequency range of 1KHz to IMHz at 3V. The fabricated capacitor also shows a high breakdown field of 8.7MV/cm. The measured leakage current density is InAlcm 2 at 5V at room temperature which is the lowest reported value till date. The capacitor also exhibits improved reliability as TBD of 10 years for applied voltage of 2V at room temperature. The capacitor meets the requirements of ITRS 2012 predicted for wireless and mixed signal/RF technologies.

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“…Sensitivity to frequency is low compared to the earlier reports at 2S o C [3,11] as shown in Table 1.…”

Section: Temperature Dependent Capacitancecontrasting

confidence: 58%

Section: Imentioning

confidence: 99%

mentioning

confidence: 97%

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Temperature and stress dependent properties of barrier type anodic Al<inf>2</inf>O<inf>3</inf> MIM capacitor

Kannadassan

Karthik

Mallick

et al. 2012

2012 International Conference on Emerging Electronics

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“…One of the high-k materials that has attracted attention recently is anodic alumina [7]- [12]. MIM capacitors using anodic alumina as the dielectric are easily and cost effectively fabricated.…”

Section: Introductionmentioning

confidence: 99%

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Hourdakis

Travlos

Nassiopoulou

2015

IEEE Trans. Electron Devices

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We report on a high-performance metal-insulatormetal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 −8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent <0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density. IndexTerms-Anodic alumina, high-k dielectric, metal-insulator-metal (MIM) capacitor.

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“…Low fabrication/processing temperatures are necessary (:::; 400 0c) so as to be compatible with back-end fabrication steps [2]. Many high-k materials (A1203 [3], Hf02 [4], Ti02 [2], and Ti-TaO [4]), including rare-earth oxides (Ce02 [5], Sm203 [6], LU203 [7], and EU203 [8]) have been used as dielectrics in MIM capacitors.…”

Section: Introductionmentioning

confidence: 99%