2012 International Conference on Emerging Electronics 2012
DOI: 10.1109/icemelec.2012.6636227
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High-density metal-insulator-metal capacitors using Gd<inf>2</inf>O<inf>3</inf>-based dielectrics

Abstract: Metal-insulator-metal (MIM) capacitors have been fabricated with single dielectric stack (Gd203) and bilayer dielectric stacks of EU203 and Gd203 (Gd203/Eu203 and EU203/Gd203) for analog and DRAM applications. While PtlGd203IPt capacitors provide the highest capacitance density

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