2009
DOI: 10.1021/nl8037689
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High-Density Crossbar Arrays Based on a Si Memristive System

Abstract: We demonstrate large-scale (1 kb) high-density crossbar arrays using a Si-based memristive system. A two-terminal hysteretic resistive switch (memristive device) is formed at each crosspoint of the array and can be addressed with high yield and ON/OFF ratio. The crossbar array can be implemented as either a resistive random-access-memory (RRAM) or a write-once type memory depending on the device configuration. The demonstration of large-scale crossbar arrays with excellent reproducibility and reliability also … Show more

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Cited by 527 publications
(342 citation statements)
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“…However, the sensing with nanowires is only exploited by the ion-sensitive field-effect-transistor paradigm [3]. Due to the nano-scale of the fabricated geometries [4], the recent discovery in solid-state devices of the memristive effect has been source of renewed research efforts in applications for high-density memory device [5]. The physical phenomena governing the memristive behavior are attributed to the change of an internal state variable, which modifies the conductance in a non-volatile manner [6].…”
Section: Introductionmentioning
confidence: 99%
“…However, the sensing with nanowires is only exploited by the ion-sensitive field-effect-transistor paradigm [3]. Due to the nano-scale of the fabricated geometries [4], the recent discovery in solid-state devices of the memristive effect has been source of renewed research efforts in applications for high-density memory device [5]. The physical phenomena governing the memristive behavior are attributed to the change of an internal state variable, which modifies the conductance in a non-volatile manner [6].…”
Section: Introductionmentioning
confidence: 99%
“…For example, the most straightforward application of resistance switching devices is in crossbar digital memories [8,10,13,16,21]. For such structures, the temperature increase is caused by Joule heating.…”
Section: Introductionmentioning
confidence: 99%
“…The entire family of compound circuit elements can be constructed from a relatively simple metal/oxide/metal framework that yields different two-terminal devices depending on the initial distribution of oxygen vacancies. These unique devices will enhance the toolkit of circuit designers and may allow new nanoelectronic architectures in a variety of applications including memory, [22,23] logic, [24,25] synaptic computing, [26] and other circuits. [27][28][29] The general concept for the reconfigurable circuit elements is illustrated in Figure 1.…”
mentioning
confidence: 99%