High d/gamma values in diode laser structures for very high power

Petrescu-Prahova, I.B.; Modak, Prasanta; Goutain, E.; Silan, D.; Bambrick, D.; Riordan, J.; Möritz, Thomas; McDougall, S.D.; Qiu, Bocang; Marsh, J.H.

doi:10.1117/12.810041

Cited by 20 publications

(14 citation statements)

References 13 publications

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“…The material structure used for our devices is similar to that reported in [9]. It consists of an active region with a 7 nm thick AlGaAs quantum well (QW) (with Al mole fraction designed for emission at 793 nm) and two 7 nm thick Al 0.35 Ga 0.65 As barriers, sandwiched in a graded index separed confinement heterostructure (GRIN-SCH) waveguide layers.…”

Section: Materials and Device Structurementioning

confidence: 97%

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser

Tandoi

Seunarine

Ironside

et al. 2011

IEEE Photonic Society 24th Annual Meeting

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Section: Materials and Device Structurementioning

confidence: 97%

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser

Tandoi

Seunarine

Ironside

et al. 2011

IEEE Photonic Society 24th Annual Meeting

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“…This requires improvement of chip performance. Maximum output of conventional high power semiconductor lasers has been limited [3] to rollover power levels of 20 to 25W for broad-area 100 um wide lasers under continuous wave (CW) room temperature conditions [2,4]. Although semiconductor material growth quality and laser design has reached a high maturity, further increase of the power from a semiconductor laser chip remained challenging.…”

Section: Introductionmentioning

confidence: 99%

29.5W continuous wave output from 100um wide laser diode

Demir

Peters

Duesterberg

et al. 2015

High-Power Diode Laser Technology and Applications XIII

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We report modeling and experimental results that demonstrate mechanisms limiting the output power of semiconductor lasers and a method experimentally yielding a dramatic increase of the maximum continuous wave output power. Unfolded cavity is used to achieve higher power and efficiency by improving the alignment between the carrier and photon density profiles in a long cavity device. This method offers reduced longitudinal spatial hole burning (LSHB) and lower photon density inside the laser cavity; therefore, it decreases possible LSHB and non-linear effects that could limit the output power of a semiconductor laser. We have demonstrated 29.5W output from 5.7mm long and 100um wide waveguide at 9xx nm using an unfolded cavity. A semiconductor laser with an unfolded cavity allows scaling of the output power by increasing the cavity length.

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“…High power semiconductor lasers in the 9xx-nm spectral range have been used in a wide range of industrial applications and, lately, attracted much attention as pumping sources for kW-level fiber lasers and material processing 1 . Therefore, recent research efforts have concentrated on understanding the limitations and increasing the laser output power of GaAs-based semiconductor lasers [2][3][4][5] . Even though record high output powers have been demonstrated 2,4,5 , operational power levels are much lower than the maximum achievable values 1 .…”

Section: Introductionmentioning

confidence: 99%

IFVD-based large intermixing selectivity window process for high power laser diodes

Arslan

Şahin

Demir

et al. 2018

Semiconductor Lasers and Laser Dynamics VIII

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Catastrophic optical mirror damage (COMD) is a key issue in semiconductor lasers and it is initiated by facet heating because of optical absorption. To reduce optical absorption, the most promising method is to form non-absorbing mirror structures at the facets by obtaining larger bandgap through impurity-free vacancy disordering (IFVD). To apply an IFVD process while fabricating high-power laser diodes, intermixing window and intermixing suppression regions are needed. Increasing the bandgap difference (ΔE) between these regions improves the laser lifetime. In this report, SrF 2 (versus Si x O 2 /SrF 2 bilayer) and SiO 2 dielectric films are used to suppress and enhance the intermixing, respectively. However, defects are formed during the annealing process of single layer SrF 2 causing detrimental effects on the semiconductor laser performance. As an alternative method, Si x O 2 /S r F 2 bilayer films with a thin Si x O 2 dielectric layer is employed to obtain high epitaxial quality during annealing with small penalty on the suppression effect. We demonstrate record large ΔE of 125 meV. Broad area laser diodes were fabricated by the IFVD process. Fabricated high-power semiconductor lasers demonstrated conservation of quantum efficiency with high intermixing selectivity. The differential quantum efficiencies are 81%, 74%, 66% and 46% for as grown, bilayer protected, SrF 2 protected and QWI lasers, respectively. High power laser diodes using bilayer dielectric films outperformed single-layer based approach in terms of the fundamental operational parameters of lasers. Comparable results obtained for the as-grown and annealed bilayer protected lasers promises a novel method to fabricate high power laser diodes with superior performance and reliability.

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High d/gamma values in diode laser structures for very high power

Cited by 20 publications

References 13 publications

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser

Sub-picosecond 9.8W peak power passively mode locked quantum well GaAs/AlGaAs laser

29.5W continuous wave output from 100um wide laser diode

IFVD-based large intermixing selectivity window process for high power laser diodes

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