High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

Ture, Erdin; Brückner, Peter; Godejohann, Birte-Julia; Aidam, R.; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, R.; Ambacher, O.

doi:10.1109/jeds.2015.2503701

Cited by 27 publications

(7 citation statements)

References 17 publications

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“…The influence of BB layer on the DC, RF and breakdown performance of trigate GaN HEMT have been simulated and compared in this paper by using Sentaurus TCAD device simulator [30]. The conventional trigate (C-trigate) HEMT structure proposed in [32,33], as shown in figure 1 is comprising of a 120 nm AlN nucleation-layer, a 1.8 µm GaN-epilayer (buffer + channel), a 22 nm Al x Ga 1−x N barrier-layer with Al mole-fraction (x) of 0.32, and a 2 nm GaN cap-layer. A 100 nm Si 3 N 4 passivation-layer has been placed on the caplayer between the source/drain and gate electrodes, and a Ni/Au gate with gate length (L G ) of 100 nm is wrapped around the fin-body from three sides.…”

Section: Device Structure and Simulation Frameworkmentioning

confidence: 99%

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GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Verma¹,

Nandi²

2022

Semicond. Sci. Technol.

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In the present work, we have proposed a GaN based trigate HEMT with AlGaN back-barrier (BB) layer that effectively suppress the punch-through effects as compared to the conventional device without back-barrier layer. Furthermore, the device performance of the proposed structure has been studied by varying the distance (tch) between AlGaN (barrier)/GaN (channel) to AlGaN (BB)/GaN (channel) interface from 100nm to 500nm. It is observed that the optimization of barrier/channel – to – BB/channel distance(tch) is beneficial for minimizing the off-state leakage current and thereby, a high ON/OFF ratio (~108) and nearly ideal subthreshold slope (~64mV/decade to ~66mV/decade) is achieved. Subsequently, it is shown that the optimized distance of tch = 300nm results in superior breakdown voltage (~198V) and cut-off frequency (~81GHz), leading to excellent Johnson figure-of-merit (JFOM). The proposed device promises great potential for use in next generations high-power microwave applications.

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Section: Device Structure and Simulation Frameworkmentioning

confidence: 99%

“…The gate electrode resistance of 3 Ω/100 µm wide device is included in our simulation study [25]. In addition to this, a contact resistance (R c ) of 0.4 Ω mm at source and drain region is introduced in the simulation [32,33,36].…”

Section: Device Structure and Simulation Frameworkmentioning

confidence: 99%

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Verma¹,

Nandi²

2022

Semicond. Sci. Technol.

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“…Certain process modifications from standard CMOS are, however, needed to achieve good performance. A possible path forward could be sought in the tri-gate (FinFET) structures introduced relatively recently as part of efforts to decrease short-channel effects in FETs [73,74,75].…”

Section: Emerging Transistor Technologies Capable Of Operating In mentioning

confidence: 99%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

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“…Additional sidewall gates provide an enhancement mode control by better suppression of short channel effects. [9][10][11][12][13][14] Ohi et al 15 proposed a multi-mesa-channel forming a trench structure to solve the shifting of threshold voltage (V TH ). Cho et al 16 fabricated a Fin-HEMT with the drain current density (J DS ) of 310 mA mm −1 and g m of 108 mS/mm.…”

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confidence: 99%

Dependence of Device Performances on Fin Ratios of AlGaN/GaN Nanoscale Fin-HEMTs

Lai,

Lin,

Liu

et al. 2023

ECS J. Solid State Sci. Technol.

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We report the fabrication and characterization of AlGaN/GaN fin-type high electron mobility transistors (Fin-HEMTs) grown on high-resistance silicon substrates. The Fin-HEMTs have a gate length of 125 nm by using electron-beam lithography with various fin ratios, which are defined as the total effective periodic gate widths over the gate width, along the whole gate width. The Fin-HEMTs are designed with three fin ratios of 0.5, 0.3, and 0.25. The on-resistance decreases with reducing the fin ratio and reaches 1.1 Ω-mm at the fin ratio of 0.25. In addition, the Fin-HEMT with a fin ratio of 0.25 still exhibits a 14% higher drain current density than the planar device. With tetramethylammonium hydroxide etching, the current collapse caused by surface traps on the fin’s sidewalls is significantly reduced from 28.9% to 2.4% by the pulse I-V measurement. The Fin-HEMTs also can improve the gate control capability through the analyses of small-signal and large-signal measurements.

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High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

Cited by 27 publications

References 17 publications

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Dependence of Device Performances on Fin Ratios of AlGaN/GaN Nanoscale Fin-HEMTs

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