High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With  $f_{T} = \hbox{436}\ \hbox{GHz}$

Liu, H.G.; Ostinelli, O.; Zeng, Yuping; Bolognesi, C.R.

doi:10.1109/led.2007.905461

Cited by 27 publications

(15 citation statements)

References 11 publications

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“…This is an improvement of at least 2.3 dB with respect to previously reported values for GaAsSbbased DHBTs [4], [5]. This unprecedented performance was enabled by the introduction of an InP/GaInP composite emitter which enables small-area devices to maintain usable gain and a good RF performance under low current operating conditions necessary to achieve low-noise figures [9], [10].…”

Section: Introductionmentioning

confidence: 62%

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400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Zeng

Ostinelli

Lovblom

et al. 2010

IEEE Electron Device Lett.

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We report self-aligned 0.3-µm emitter InP/GaAsSb/ InP DHBTs featuring a common-emitter current gain of 46 and cutoff frequencies f T = 400 GHz and f MAX = 322 GHz for devices implemented with a 20-nm C-doped base and a 75-nm InP collector. Our DHBTs display attractive noise properties with a minimum noise figure NF min = 1.2 dB at 20 GHz, which is nearly independent of frequency over the 2-20-GHz measurement band. This represents an improvement of at least 2.3 dB with respect to previously published results for GaAsSb-based devices, due to process improvements that allow good RF characteristics to be maintained at the low current levels required for low noise operation. Analysis shows that the low-frequency NF min is limited by the relatively low current gain values typical of III-V HBTs. InP/GaAsSb DHBTs could be attractive low-noise devices for higher frequencies.Index Terms-Double heterojunction bipolar transistors (DHBTs), InP/GaAsSb, millimeter-wave transistors, minimum noise figure.

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Section: Introductionmentioning

confidence: 62%

“…SEM inspection confirmed the emitter mesa dimension of 0.3 μm and the base contact width of ∼ 0.3 μm. The maximum DC current gain β = I C /I B is 46 with V CB = 0 V, due to the (Ga,In)P composite emitter [9], [10]. The collector and base current ideality factors are n C = 1.0 and n B = 1.58, respectively.…”

Section: Device Fabricationmentioning

confidence: 99%

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Zeng

Ostinelli

Lovblom

et al. 2010

IEEE Electron Device Lett.

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“…In recent years, double heterojunction bipolar transistors (DHBTs) have been extensively studied due to their applications in wideband communications, RF amplification, imaging, remote atmospheric sensing, and space exploration [1]. Among the material system used to fabricate HBTs, antimony-based alloys offer wide range of bandgaps and band offsets, and their high electron and hole mobilites make them potential candidates for terahertz transistor technology [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…Combining pseudomorphically strained (Ga,In)P emitter with a uniform GaAsSb base, the maximum f T of 436 and DC current gain of 338 were experimentally achieved [6]. K. Kurishima et al [4] have experimentally demonstrated that HBTs with compositionally graded InGaAs base show more than 50% improvement in current gain and about 20% in f T compared to uniform base structure.…”

Section: Introductionmentioning

confidence: 99%

Ultra high-current-gain In<inf>x</inf>Ga<inf>1&#x2212;x</inf>Sb-based DHBT with compositional graded base

Alam

Nayeem

Islam

2012

2012 7th International Conference on Electrical and Computer Engineering

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In x Ga 1-x Sb-based double heterojunction bipolar transistor (DHBT) with compositional graded base and collector is presented. A numerical device simulator Silvaco's ATLAS is used to analyze the performance of the device. The Gummel plots and simulation analysis demonstrate extremely high DC current gain with uniform characteristic for the wide range of collector current. The magnitude of the current gain is found to about 1300 and it is the highest gain for HBTs/DHBTs as reported so far. Preliminarily we achieved this extremely high gain may be due to energy band engineering using compositional gradient technique in the device structure.Index Terms -InGaSb-based DHBT, DC current gain, compositional graded base.

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“…The combination of an InAlP emitter and an AlGaAsSb graded base has shown to be effective in increasing the current gain [5]. Recently, Liu et al have proposed the use of an GaInP/GaAsSb E/B junction to remove the conduction band offset and have demonstrated a very high dc current gain and a high f T of 436 GHz [6]. However, the reduction of the turn-on voltage remains to be a task for low-power applications.…”

Section: Introductionmentioning

confidence: 99%

Low Turn-On Voltage and High-Current $\hbox{InP}/ \hbox{In}_{0.37}\hbox{Ga}_{0.63}\hbox{As}_{0.89}\hbox{Sb}_{0.11}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Double Heterojunction Bipolar Transistors

Chen

Teng

Chen

et al. 2008

IEEE Electron Device Lett.

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We report on the dc and microwave characteristics of an InP/In 0.37 Ga 0.63 As 0.89 Sb 0.11 /In 0.53 Ga 0.47 As double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In 0.37 Ga 0.63 As 0.89 Sb 0.11 base reduces the conduction band offset ∆E C at the emitter/base junction and the base band gap, which leads to a very low V BE turn-on voltage of 0.35 V at 1 A/cm 2 . A current gain of 125 and a peak f T of 238 GHz have been obtained on the devices with an emitter size of 1 × 10 µm 2 , suggesting that a high collector average velocity and a high current capability are achieved due to the type-II lineup at the InGaAsSb/InGaAs base/collector junction.

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High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With $f_{T} = \hbox{436}\ \hbox{GHz}$

Cited by 27 publications

References 11 publications

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Ultra high-current-gain In<inf>x</inf>Ga<inf>1&#x2212;x</inf>Sb-based DHBT with compositional graded base

Low Turn-On Voltage and High-Current $\hbox{InP}/ \hbox{In}_{0.37}\hbox{Ga}_{0.63}\hbox{As}_{0.89}\hbox{Sb}_{0.11}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Double Heterojunction Bipolar Transistors

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High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With $f_{T} = \hbox{436}\ \hbox{GHz}$

Cited by 27 publications

References 11 publications

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance

Ultra high-current-gain In<inf>x</inf>Ga<inf>1&amp;#x2212;x</inf>Sb-based DHBT with compositional graded base

Low Turn-On Voltage and High-Current $\hbox{InP}/ \hbox{In}_{0.37}\hbox{Ga}_{0.63}\hbox{As}_{0.89}\hbox{Sb}_{0.11}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Double Heterojunction Bipolar Transistors

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Ultra high-current-gain In<inf>x</inf>Ga<inf>1−x</inf>Sb-based DHBT with compositional graded base