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We report on the dc and microwave characteristics of an InP/In 0.37 Ga 0.63 As 0.89 Sb 0.11 /In 0.53 Ga 0.47 As double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In 0.37 Ga 0.63 As 0.89 Sb 0.11 base reduces the conduction band offset ∆E C at the emitter/base junction and the base band gap, which leads to a very low V BE turn-on voltage of 0.35 V at 1 A/cm 2 . A current gain of 125 and a peak f T of 238 GHz have been obtained on the devices with an emitter size of 1 × 10 µm 2 , suggesting that a high collector average velocity and a high current capability are achieved due to the type-II lineup at the InGaAsSb/InGaAs base/collector junction.

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