High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

Zhang, Jianli; Xiong, Chuanbing; Liu, Junlin; Quan, Zhi; Wang, Li; Jiang, Fengyi

doi:10.1007/s00339-014-8283-9

Cited by 30 publications

(15 citation statements)

References 15 publications

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“…Because of the imperfect structure and high polarization field in high-indium content InGaN quantum wells (QWs), the EQE for a green LED is quite low compared with that for a blue LED. Various approaches have been applied to solve this problem, such as the use of nonpolar/semipolar substrates, the use of a Si substrate, band engineering, and the introduction of a surface plasmon (SP) [ 3 , 4 , 5 , 6 ]. The polarization reduction and incorporation of indium into the InGaN alloy have been improved by these methods except for the last one, the SP method.…”

Section: Introductionmentioning

confidence: 99%

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence

et al. 2018

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We analyzed the coupling behavior between the localized surface plasmon (LSP) and quantum wells (QWs) using cathodoluminescence (CL) in a green light-emitting diodes (LED) with Ag nanoparticles (NPs) filled in photonic crystal (PhC) holes. Photoluminescence (PL) suppression and CL enhancement were obtained for the same green LED sample with the Ag NP array. Time-resolved PL (TRPL) results indicate strong coupling between the LSP and the QWs. Three-dimensional (3D) finite difference time domain (FDTD) simulation was performed using a three-body model consisting of two orthogonal dipoles and a single Ag NP. The LSP–QWs coupling effect was separated from the electron-beam (e-beam)–LSP–QW system by linear approximation. The energy dissipation was significantly reduced by the z-dipole introduction under the e-beam excitation. In this paper, the coupling mechanism is discussed and a novel emission structure is proposed.

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Section: Introductionmentioning

confidence: 99%

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence

et al. 2018

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“…Even LEDs grown on GaN/Si substrates display an enhanced In incorporation rate into InGaN QWs due to the introduction of tensile strain from the underlying GaN layer. 22,23 Recently, 608-nm-wavelength InGaN LEDs have demonstrated as high as a peak wall-plug efficiency (WPE) of 23.5% at 0.8A/cm 2 . 23 The increment of the InGaN growth temperature is a key factor in enhancing the performance of a device.…”

mentioning

confidence: 99%

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

et al. 2022

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Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width at half-maximum of 51 nm. The packaged LED’s external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays.

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“…However, growing high-quality, In-rich InGaN is challenging because of the low thermodynamic stability and high evaporation rate of InN at high temperatures. This is the cause for the lack of green-yellow emitters for commercial solid-state lighting applications, which continues to exist despite some indications of research success [37][38][39][40] and even the pursuit of MOCVD-fabricated >630 nm GaN LEDs [41,42].…”

Section: Materials Propertiesmentioning

confidence: 99%

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

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Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

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High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

Cited by 30 publications

References 15 publications

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence

Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

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