High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Abstract

Abstract-High-voltage Al 0 22 Ga 0 78 N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.Index Terms-Breakdown voltage, field-effect transistors (FETs), field plates, high-electron mobility transistors (HEMTs), passivation, power electronics.

Extended-$\hbox{p}^{+}$ Stepped Gate LDMOS for Improved Performance

“…The processing steps are created using the process simulator ATHENA [15]. This is similar to the multi-gate formation on a stepped insulator reported by Xing et al [16]. On an SOI wafer with an n-silicon layer, a 50 nm thick gate oxide is formed using thermal oxidation followed by a p + poly layer deposition and patterning.…”

A New Hetero-material Stepped Gate (HSG) SOI LDMOS for RF Power Amplifier Applications

“…2 shows the proposed fabrication procedure of HSG gate LDMOS. This process is similar to the method proposed by Xing et al [7]. The fabrication process begins with an SOI wafer with an n-silicon layer with a doping of 2×10 16 cm -3 .…”

Slanted Tri-Gates for High-Voltage GaN Power Devices

“…An important reason for such early breakdown is the inhomogeneous distribution of the electric field. When a high voltage is blocked in OFF state, the electric field concentrates at the edge of the gate electrode, leading to the early breakdown of the device [1]- [5]. To spread more homogeneously the electric field, various designs of FPs have been developed [4]- [6], among which slant FPs have been proven more effective [7]- [14].…”