2007
DOI: 10.1088/0957-4484/18/15/155203
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High aspect ratio GeO2nano- and microwires with waveguiding behaviour

Abstract: High aspect ratio GeO 2 nano-and microwires have been grown by thermal treatment at 600 • C of compacted Ge powder under argon flow. The wires have cross-sectional dimensions from less than 100 nm to about 1 μm, depending on the duration of the treatment, and lengths of up to about 2000 μm. Waveguide behaviour of the wires was demonstrated for visible light, which shows the potential applications of these structures for optical nanodevices.

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Cited by 33 publications
(39 citation statements)
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(20 reference statements)
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“…Therefore GeO 2 is a promising material for various applications such as optoelectronic devices, photo sensors and vacuum technology, etc. [7]. It is well known that germanium oxide crystallized in two stable crystalline structures on ambient temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore GeO 2 is a promising material for various applications such as optoelectronic devices, photo sensors and vacuum technology, etc. [7]. It is well known that germanium oxide crystallized in two stable crystalline structures on ambient temperature.…”
Section: Introductionmentioning
confidence: 99%
“…This method has been previously reported to lead to the growth of elongated structures of different semiconductor oxides on the surface of the sample, so that neither a catalyst nor a foreign substrate is used. [8][9][10][11][12][13] In Ref. 8, the growth of SnO 2 microand nanotubes with rectangular cross section was reported, while in the case of In 2 O 3 , 11 wires, necklace-and arrowshape structures were grown from InN.…”
Section: Introductionmentioning
confidence: 99%
“…12 and GeO 2 . 13 In the present work Ga 2 O 3 nanowires undoped and doped with Er or Cr have been grown by a thermal evaporation-deposition method under argon flow. The nanowires have been characterized by x-ray diffraction ͑XRD͒, scanning electron microscopy ͑SEM͒, and photoluminescence ͑PL͒.…”
mentioning
confidence: 99%