High-Aspect-Ratio Fine Cu Sidewall Interconnection over Chip Edge with Tapered Polymer for MEMS-LSI Multi-Chip Module

Noriki, Akihiro; Kaiho, Yoshiyuki; Iwata, Eiji; Ohara, Yuki; Murugesan, M.; Lee, K. W.; Bea, J. C.; Fukushima, Takafumi; Tanaka, Tetsu; Koyanagi, Mitsumasa

doi:10.7567/ssdm.2009.d-1-3

Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials 2009

DOI: 10.7567/ssdm.2009.d-1-3

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High-Aspect-Ratio Fine Cu Sidewall Interconnection over Chip Edge with Tapered Polymer for MEMS-LSI Multi-Chip Module

Akihiro Noriki

Yoshiyuki Kaiho

Eiji Iwata

et al.

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2010

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“…In the MEMS-LSI multichip module, LSIs and passive chips with 100-μm thickness were electrically connected through Cusidewall interconnections with 10-μm thickness and 30-μm width directly crossing over the chips by using the optimized photolithography and Cu electroplating process [11]- [16].…”

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A Cavity Chip Interconnection Technology for Thick MEMS Chip Integration in MEMS-LSI Multichip Module

Lee

Kanno

Kiyoyama

et al. 2010

J. Microelectromech. Syst.

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We develop a cavity chip interconnection technology for thick microelectromechanical systems (MEMS) chip integration. The cavity chip comprising Cu through-silicon via and Cu beam-lead wire was fabricated by micromachining processes. The cavity chip could easily connect a thick MEMS chip with a high step height of more than a few hundred micrometers without changing the circuit design of MEMS chip and complicated extra process. Fundamental characteristics are successfully obtained from a pressure-sensing MEMS chip of 360-μm thickness, where the MEMS chip was connected to a Si substrate by the cavity chip without degrading brittle sensing elements. This interconnection technology would provide a good solution for thick MEMS chip integration with high flexibility. [2010-0064] Index Terms-Beam lead, cavity chip, heterogeneous integration, microelectromechanical systems (MEMS) large-scale integration (LSI) (MEMS-LSI) multichip module, sidewall interconnection, through-silicon via (TSV).

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confidence: 99%

A Cavity Chip Interconnection Technology for Thick MEMS Chip Integration in MEMS-LSI Multichip Module

Lee

Kanno

Kiyoyama

et al. 2010

J. Microelectromech. Syst.

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High-Aspect-Ratio Fine Cu Sidewall Interconnection over Chip Edge with Tapered Polymer for MEMS-LSI Multi-Chip Module

Cited by 1 publication

References 0 publications

A Cavity Chip Interconnection Technology for Thick MEMS Chip Integration in MEMS-LSI Multichip Module

A Cavity Chip Interconnection Technology for Thick MEMS Chip Integration in MEMS-LSI Multichip Module

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