We proposed 3D heterogeneous opto-electronic integration technology for system-on-silicon (SOS). In order to realize 3D opto-electronic integrated system-on-silicon (SOS), we developed novel heterogeneous integration technology of LSI, MEMS and optoelectronic devices by implementing 3D heterogeneous opto-electronic multi-chip module composed with LSI, passives, MEMS and optoelectronic devices. The electrical interposer mounted with amplitude shift keying (ASK) LSI, LC filter and pressure-sensing MEMS chips and the optical interposer embedded with vertical-cavity surface-emitting laser (VCSEL) and photodiode (PD) chips are precisely bonded to form 3D opto-electronic multi-chip module. Opto-electronic devices are electrically connected via through-silicon vias (TSVs) which were formed into the interposers. Microfluidic channels are formed into the interposer by wafer direct bonding technique. 3D heterogeneous opto-electronic multi-chip module is successfully implemented for the first time.
Wafer thinning and formation of through-Si via (TSV) and metal microbump are key processes in 3D LSI fabrication. However, it might introduce mechanical stress and crystal defects in thinned wafers. In addition, Cu for TSV and microbump might introduce metal contamination in thinned Si substrate. Then the impact of mechanical stress and metal contamination in the thinned Si substrate has been investigated. The remnant stress left after wafer thinning was evaluated by micro-Raman spectroscopy ( RS) and XPS. It was found that the mechanical stress remained in the back surface of Si substrate after wafer thinning and a part of this mechanical stress appeared in the surface of Si substrate. The metal contamination in such thinned Si substrate has been evaluated by a C-t method. It was found that the carrier generation lifetime was degraded by Cu diffused into Si substrate at relatively low temperature of 200 . The mechanical stress/strain in the thinned Si substrate after wafer bonding was also evaluated to investigate the influences of metal microbumps to the thinned Si substrate. It was found that the local mechanical stress was generated in the Si substrate surface by the microbumps. This local stress caused a 3% change in the ON current of MOS transistor.
To recover visual sensation of blind patients, we have proposed a novel three dimensionally (3D) stacked retinal prosthesis chip in which several LSI chips such as consisting of photodetector, signal processing circuit and stimulus current generator are vertically stacked and electrically connected using 3D integration technology. In this work, we developed several key process for realizing 3D stacked retinal prosthesis chip. Fine sized Cu TSV of 10 µm width and 30 µm depth was successfully formed from the back side of the thinned prosthesis chip. The prosthesis chip with the back side Cu TSVs was flip-chip bonded to Si substrate/flexible substrate through Cu/Sn micro-bumps for evaluating the feasibility of 3D integration technology.
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