High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications

Kok, Angela; Hansen, Thor-Erik; Jensen, Geir Uri; Lietaer, Nicolas; Mielnik, Michał; Storås, Preben

doi:10.1109/nssmic.2009.5402256

Cited by 9 publications

(6 citation statements)

References 18 publications

(16 reference statements)

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“…The process was therefore adapted to the specific tools of the SINTEF clean room. The main changes are: DRIE mask: Aluminum was substituted for thick resist, as neither resist nor silicon oxide offered sufficient selectivity for the long high aspect ratio etching [ 32 ]; When the n-type electrodes were doped and filled, they were capped with a protection oxide of 300 nm. Note that polysilicon filling was still performed at Stanford Nanofabrication Facility because of limitations in the polysilicon process at SINTEF MiNaLab.…”

Section: Overview Of Fabrication Technologies For 3d Detectorsmentioning

confidence: 99%

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

et al. 2020

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This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.

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Section: Overview Of Fabrication Technologies For 3d Detectorsmentioning

confidence: 99%

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

et al. 2020

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“…In the case of the multi-layer SWS as presented in this paper, etching process can be one of the solution, due to its high aspect ratio and precise structure comes from high frequency coverage beyond 400 GHz. A silicon structure which has aspect ratio more than 1:50 fabricated by deep reactive-ion etching has been reported by [23,24].…”

Section: Anti-reflection Coating Of Silicon Lensmentioning

confidence: 99%

Concept Study of Optical Configurations for High-Frequency Telescope for LiteBIRD

et al. 2018

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The high frequency telescope (HFT) for LiteBIRD is designed with refractive and reflective optics. In order to improve sensitivity, this paper suggests the new optical configurations of the HFT which have approximately times larger focal planes than that of the original design. The sensitivities of both the designs are compared, and the requirement of anti-reflection (AR) coating on the lens for the refractive option is derived. We also present the simulation result of a sub-wavelength AR structure on both surfaces of silicon, which shows a band-averaged reflection of 1.1 − 3.2 % at 101-448 GHz.

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“…An aspect ratio of 18.3 was achieved in the 285 µm thick wafers (Fig.2a) and using the same process on 5 µm trenches, an aspect ratio of about 54:1 was achieved (Fig.2b). More details of these DRIE processes can be found in ref [15]. Polymer that accumulated on the wafers during the DRIE process was then removed by oxygen plasma cleaning and the aluminium mask was removed.…”

Section: Fabrication Of Full 3d Sensors With Active Edge At Sintefmentioning

confidence: 99%

“…The effective drift lengths also reduce significantly. After being irradiated with a fluence of 10 15 n/cm 2 , the calculated effective drift lengths are reduced to 150 μm for electrons and 50 μm for holes at -20 o C [3,4]. These drift lengths are shorter than the distance between the n and the p electrodes in a planar detector, which is approximately equal to the wafer thickness and is typically between 250 and 500 μm.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of 3D Silicon Detectors

Kok¹,

Hansen²,

Lietaer³

et al. 2011

Proceedings of 19th International Workshop on Vertex Detectors — PoS(VERTEX 2010)

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Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

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High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications

Cited by 9 publications

References 18 publications

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

Concept Study of Optical Configurations for High-Frequency Telescope for LiteBIRD

Fabrication of 3D Silicon Detectors

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