High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlO x interlayer

Wang, Peng; Li, Xin; Liu, Hanhui; Lai, S.; Chen, Yuye; Yang, Xu; Chen, Songyan; Cheng, Li; Huang, Wei; Tang, Dingliang

doi:10.1016/j.materresbull.2015.07.037

Cited by 11 publications

(8 citation statements)

References 19 publications

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“…The accumulation of Ge around Al grain boundaries due to enhanced diffusion leads to the nucleation and growth at the lowest ever temperature. , These are the main causes to reduce crystallization temperature. Table is prepared to show the interplay of various variables such as deposition methods, phase conversion conditions, and crystallization temperature in explaining a reduction in crystallization temperature. − ,,,,,− Better crystallization in Xe + ion-irradiated samples may also be understood in terms of recoils or the density of free atoms generated due to irradiation. It is evident that the number of recoils generated due to Xe + ions is significantly larger than that of Kr + ions.…”

Section: Resultsmentioning

confidence: 99%

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Maity,

Ojha,

Dubey

et al. 2023

Crystal Growth & Design

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The fabrication of polycrystalline Ge films at relatively low temperatures is of great importance for their applications in advanced microelectronic and solar cell devices. In this paper, we present the crystallization of Ge in a c-Al/a-Ge bilayer system at a temperature of 125 °C (lowest ever) using low energy ion beam irradiation followed by post-thermal annealing. The c-Al/a-Ge bilayer thin films are irradiated with 500 keV Kr + and Xe + ions at different fluences and then postannealed at a fixed temperature of 200 °C. The postannealing of the samples at a fixed temperature of 200 °C leads to the formation of polycrystalline Ge, and the crystallinity is observed to increase with increasing ion fluence. The crystallinity is found to be better in the samples irradiated by Xe + ions as compared to the Kr + ions. It is also observed that the thermal annealing of ion-irradiated samples yields better crystallinity than that of the samples that are annealed without irradiation. A temperature-dependent Raman measurement on samples irradiated with a fluence of 1 × 10 16 ions cm −2 reveals the crystallization of Ge at 125 °C. The concepts of layer exchange and irradiation-enhanced kinetics are invoked to explain the crystallization of Ge via different characterization techniques and by using the transport of ions in matter computer simulation code. The presented paper demonstrates the development of polycrystalline Ge at a relatively low temperature using a unique technique of ion irradiation, which may be realized for high performance advanced devices in the future.

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Section: Resultsmentioning

confidence: 99%

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Maity,

Ojha,

Dubey

et al. 2023

Crystal Growth & Design

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“…The level of preference for 〈001〉 and 〈111〉 directions were found in other studies by rapid-meltinggrowth and metal-induced crystallization. [28][29][30] The preference for the 〈111〉 direction and average grain size were highest in the Ge films after annealing. In addition, Ge films at 〈111〉 have the highest carrier mobility.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, Ge films at 〈111〉 have the highest carrier mobility. 29,30) The carrier mobility is affected by defects such as grain boundary or dislocation, and=or trap concentrations. In our study, the sample with large grain size possessed higher carrier mobility.…”

Section: Resultsmentioning

confidence: 99%

Grain orientation and electrical properties of polycrystalline germanium after laser annealing

Yu¹,

Hsu²,

Lin³

et al. 2018

Jpn. J. Appl. Phys.

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The grain growth orientation and electrical properties of Ge films on Si substrates deposited by chemical vapor deposition (CVD) after laser annealing with various laser powers were examined using X-ray diffraction (XRD), electron backscatter diffraction (EBSD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Hall-effect measurement. The growth orientation of polycrystalline Ge (poly-Ge) films is significantly affected by the laser power. When the laser power was increased to 3 W, the Ge grain growth in the lateral direction was inclined toward directions, o001p and o111p. The shape of the Ge grains gradually transformed from columnar to equiaxed, and their surface became rougher with increasing laser power. The carrier mobility and work function (WF) gradually increased to 48.1 cm 2 V %1 s %1 and 4.93 eV, respectively, at a laser power of 3 W. These results indicate that the degree of laser power affects the crystallinity, grain orientation, carrier mobility, carrier concentration, and WF of Ge films subjected to laser annealing. This is useful for developing high-efficiency Ge-based integrated circuits devices.

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“…Metal-induced layer exchange (MILE) has attracted an ever growing interest among researchers in the field as they work toward optimized crystallization of semiconductor amorphous thin films, such as Si, − Ge, − and C, at low temperature. Several studies on the MILE have succeeded in synthesizing Ge on plastic substrates. − Studies applying the MILE to SiGe have been actively conducted, as evidenced by widespread documented reports in these areas. − Recently, we developed the Al-induced layer exchange (ALILE) of SiGe and synthesized SiGe layers on glass substrates at ≤400 °C in the whole composition range. , In this study, we clarify the thermoelectric properties of the Si 1– x Ge x (0 ≤ x ≤ 1) layers obtained by the ALILE for the first time. Further, the ALILE-SiGe layer was developed directly on a plastic substrate, resulting in the highest power factor among most thermoelectric films directly grown on plastic substrates.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Inorganic SiGe Film Synthesized on Flexible Plastic Substrate

Kusano

Yamamoto

Nakata

et al. 2018

ACS Appl. Energy Mater.

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For developing thermoelectric thin-film devices using reliable inorganic materials, we investigated the synthesis of SiGe directly onto insulating substrates. An Al-induced layer exchange technique was employed, which enabled us to form SiGe on glass substrates at a low temperature (≤400 °C) in the whole SiGe composition range. The SiGe layers were observed to contain Al atoms in concentrations corresponding to their solid solubility limits during growth, which resulted in the formation of self-organically highly p-doped layers without requiring hightemperature-activation annealing. Results indicated that a high power factor (430 μW/mK 2 ) and a low process temperature were simultaneously achieved for SiGe on glass. A SiGe layer fabricated on a plastic substrate exhibited a power factor of 190 μW/mK 2 , which is higher than most thermoelectric films directly grown onto a plastic substrate. These achievements will present practical applications for flexible thin-film thermoelectrics with a high reliability.

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High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlO x interlayer

Cited by 11 publications

References 19 publications

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Grain orientation and electrical properties of polycrystalline germanium after laser annealing

Thermoelectric Inorganic SiGe Film Synthesized on Flexible Plastic Substrate

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