Abstract:The grain growth orientation and electrical properties of Ge films on Si substrates deposited by chemical vapor deposition (CVD) after laser annealing with various laser powers were examined using X-ray diffraction (XRD), electron backscatter diffraction (EBSD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Hall-effect measurement. The growth orientation of polycrystalline Ge (poly-Ge) films is significantly affected by the laser power. When the laser power was increased t… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.