2017
DOI: 10.1109/led.2017.2698083
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HfZrO<italic>x</italic>-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

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Cited by 220 publications
(179 citation statements)
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“…55 In our device structure, weights are defined through the intermediate states of the channel resistance, enabled via the multi-domain nature of the ferroelectric HZO layer. 25,29,56 By switching only a subset of the domains, a state between R ON and R OFF can be set. 29 The fraction of the switched ferroelectric domains FeFET showed stable retention properties for 18 differentiable channel resistances (>4bit) for the full 1500 s. The good retention measurement hints to an absence of depolarization or other screening mechanisms.…”
Section: Resultsmentioning
confidence: 99%
“…55 In our device structure, weights are defined through the intermediate states of the channel resistance, enabled via the multi-domain nature of the ferroelectric HZO layer. 25,29,56 By switching only a subset of the domains, a state between R ON and R OFF can be set. 29 The fraction of the switched ferroelectric domains FeFET showed stable retention properties for 18 differentiable channel resistances (>4bit) for the full 1500 s. The good retention measurement hints to an absence of depolarization or other screening mechanisms.…”
Section: Resultsmentioning
confidence: 99%
“…To gain a resistance change by ferroelectric switching, one should adopt a ferroelectric field-effect transistor (FeFET) structure with three terminals, where the change in dielectric polarization causes a 5 variation in the resistance of the FeFET channel [35]. The resistance change in the FeFET thus enables inmemory computing elements such as neuromorphic synapses [36].…”
Section: Computational Memory Technologiesmentioning
confidence: 99%
“…The multidomain polarization switching capability of polycrystalline HZO (hafnium–zirconium–oxide) thin film can be utilized to tune the FeFET threshold voltage which in turn can modulate FeFET channel conductance. The FeFET channel's multiconductance levels can be used to record synaptic weight . Recently, Jerry et al demonstrated an FeFET‐based synaptic device using Hf 0.5 Zr 0.5 O 2 (HZO) as ferroelectric material .…”
Section: Ferroelectric Field‐effect Transistormentioning
confidence: 99%