Hf-based high-k materials for Si nanocrystal floating gate memories

Khomenkova, L.; Sahu, Binod Bihari; Slaoui, A.; Gourbilleau, Fabrice

doi:10.1186/1556-276x-6-172

Cited by 39 publications

(45 citation statements)

References 24 publications

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“…The formation of crystallized Si-ncs upon an annealing at 1100°C can be easier distinguished (Fig.1a). It is worth to note that recently we showed that similar Si-richSiO 2 materials demonstrate bright emission in red-near infrared spectral range and its appearance is accompanied by the formation of amorphous Si-ncs (18). However, the Sincs were found to be amorphous when annealed at T A <1100°C (24).…”

Section: Resultsmentioning

confidence: 96%

Silicon Nanoclusters Embedded into Oxide Host for Non-Volatile Memory Applications

Khomenkova

Portier

Sahu³

et al. 2011

ECS Trans.

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Non-volatile memory structures with embedded silicon nanoclusters were fabricated by RF magnetron sputtering approach. The capacitance-voltage characteristics of classical SiO 2 /Si-ncsSiO 2 /SiO 2 and HfO 2 /Si-ncs-SiO 2 /SiO 2 structures have been compared. The specific deposition conditions and annealing treatment allowed a large memory window of about 6.8 V at a sweeping voltage of ± 6 V to be achieved. It was observed that the similar memory capacitance can be obtained for classical SiO 2 /Sincs-SiO 2 /SiO 2 structures using multilayer charge storage node. The analysis of microstructural properties of the samples revealed that an annealing at 1000-1100°C results in the formation of crystallized silicon clusters, while the crystallization of HfO 2 occurred with a tetragonal phase. It was also revealed that an annealing treatment at 950°C, at which amorphous Si clusters are formed, allowed a highest memory window to be obtained. This result indicates the benefit of low thermal budget treatment for low operating voltage non-volatile memory devices.

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Section: Resultsmentioning

confidence: 96%

Silicon Nanoclusters Embedded into Oxide Host for Non-Volatile Memory Applications

Khomenkova

Portier

Sahu³

et al. 2011

ECS Trans.

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“…Consequently, the formation of Si-ncs can occur due to decomposition of the SiO x phase, similar to that observed for Si-richSiO 2 materials. 9,19 It is worth to note that for HfSiO materials with about 20 at. % of Hf content, the formation of HfO 2 -rich and SiO 2 -rich phases occurred only upon post-deposition processing.…”

Section: Discussionmentioning

confidence: 99%

“…3,[5][6][7] Widespread applications of high-j materials are linked with the floating gate non-volatile memory devices containing semiconductor and/or metallic nanocrystals (NCs) or amorphous nanoclusters (ncs). 8,9 Their controlled precipitation in high-j oxide host is a major challenge for such devices.…”

Section: Introductionmentioning

confidence: 99%

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Talbot

Roussel

Genevois

et al. 2012

Journal of Applied Physics

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Articles you may be interested inThe effect of nanocrystallite size in monoclinic HfO 2 films on lattice expansion and near-edge optical absorption Appl. Phys. Lett. 96, 191904 (2010) Hafnium silicate films were fabricated by RF reactive magnetron sputtering technique. Fine microstructural analyses of the films were performed by means of high-resolution transmission electron microscopy and atom probe tomography. A thermal treatment of as-grown homogeneous films leads to a phase separation process. The formation of SiO 2 and HfO 2 phases as well as pure Si one was revealed. This latter was found to be amorphous Si nanoclusters, distributed uniformly in the film volume. Their mean diameter and density were estimated to be about 2.8 nm and (2.9 6 0.4) Â 10 17 Si-ncs/cm 3 , respectively. The mechanism of the decomposition process was proposed. The obtained results pave the way for future microelectronic and photonic applications of Hf-based high-j dielectrics with embedded Si nanoclusters. V C 2012 American Institute of Physics. [http://dx

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“…1 Compared to semi-conductive (Si,Ge) 2,3 and organic (C, graphene) 4,5 charge storage candidates, noble metal nanoparticles (Pt, 6 Au 7 and Ag 8 ) embedded in oxide dielectric films (Al 2 O 3 , HfO x , ZrO 2 , TiO 2 , HfAlO x ) have been highlighted due to their high work function and excellent charge properties, but they are not suitable for large-scale industrial applications due to their high cost. Ni nanocrystals (Ni-NCs) has a high work function of 5.35 eV, 9 stable chemical properties, and have been reported to exhibit a memory window width (flat-band voltage shift |∆ V FB |) ranging from 1 to 20 V, [10][11][12][13][14][15][16] showing excellent charge storage capacity.…”

Section: Introductionmentioning

confidence: 99%

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

et al. 2016

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A nano-floating gate memory structure based on Ni nanocrystals (NCs) embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

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Hf-based high-k materials for Si nanocrystal floating gate memories

Cited by 39 publications

References 24 publications

Silicon Nanoclusters Embedded into Oxide Host for Non-Volatile Memory Applications

Silicon Nanoclusters Embedded into Oxide Host for Non-Volatile Memory Applications

Atomic scale observation of phase separation and formation of silicon clusters in Hf higk-κ silicates

Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

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