Heterogeneous integration of semiconducting and carbide nanowires on Si substrates

Tsakalakos, Loucas; Taylor, Seth T.; Corderman, Reed R.; Balch, Joleyn; Fronheiser, Jody

doi:10.1117/12.696056

Cited by 4 publications

(2 citation statements)

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“…Three samples were manufactured to determine the concentration and distribution of boron: no B (0 TMB), low B (2 TMB), and high B (8 TMB) flow rate. P‐type doping in such NWs has been confirmed in separate experiments on transistors (Tsakalakos et al , 2006, 2007b).…”

Section: Experimental Materials and Methodsmentioning

confidence: 66%

Characterization of dilute species within CVD‐grown silicon nanowires doped using trimethylboron: protected lift‐out specimen preparation for atom probe tomography

Prosa

Alvis

Tsakalakos

et al. 2010

Journal of Microscopy

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SummaryThree-dimensional quantitative compositional analysis of nanowires is a challenge for standard techniques such as secondary ion mass spectrometry because of specimen size and geometry considerations; however, it is precisely the size and geometry of nanowires that makes them attractive candidates for analysis via atom probe tomography. The resulting boron composition of various trimethylboron vapour-liquid-solid grown silicon nanowires were measured both with time-offlight secondary ion mass spectrometry and pulsed-laser atom probe tomography. Both characterization techniques yielded similar results for relative composition. Specialized specimen preparation for pulsed-laser atom probe tomography was utilized and is described in detail whereby individual silicon nanowires are first protected, then lifted out, trimmed, and finally wet etched to remove the protective layer for subsequent three-dimensional analysis.

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Section: Experimental Materials and Methodsmentioning

confidence: 66%

Characterization of dilute species within CVD‐grown silicon nanowires doped using trimethylboron: protected lift‐out specimen preparation for atom probe tomography

Prosa

Alvis

Tsakalakos

et al. 2010

Journal of Microscopy

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“…Typical growth times are 1-5 minutes. P-type doping in the nanowires has been confirmed in separate experiments [11,12].…”

Section: Experimental Procedures Device Fabricationmentioning

confidence: 62%

Vertically Aligned Silicon Nanowire Actuators and Switches

Tsakalakos¹,

Subramanian²,

Wang³

et al. 2008

2008 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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We report the development of novel, vertically aligned silicon nanowire electrostatic switches targeting 1V operation and 1 nanosecond switching times for future computing applications. Analytical and finite element models show that it is possible to obtain 1V operation and nanosecond switching. The source, gate, and drain electrodes of the nanoswitch are fabricated using standard MEMS processes. Silicon nanowires are subsequently grown by chemical vapor deposition. Electrostatic actuation of a Si nanowire in a two-terminal configuration was demonstrated in situ in a scanning electron microscope, and preliminary electrical tests showed repeated actuation of nanowires with an on-state resistance of ~342 MΩ.

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