Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

Nemeth, I.; Kunert, Bernardette; Stolz, W.; Volz, Kerstin

doi:10.1016/j.jcrysgro.2007.11.127

Cited by 168 publications

(136 citation statements)

References 12 publications

(24 reference statements)

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“…8,14,15 Before the growth, an annealing (1 min-10 min) at high temperature (800 • C-950 • C) under H 2 is added to promote structuring of the 2 × 1 surface. [17][18][19][20][21][22][23][24][25][26][27] The Si surface presents mainly double steps (Figure 1(b)) with a width of about 100 nm, and few monoatomic islands remains at the step edges (not clearly visible from the AFM image). Despite theoretical thermodynamic considerations do not predict double step formation for quasi-nominal Si(001) substrate, this anomalous behavior (formation of double steps at low miscut angle) has already been observed by other groups.…”

Section: -2mentioning

confidence: 99%

“…Despite theoretical thermodynamic considerations do not predict double step formation for quasi-nominal Si(001) substrate, this anomalous behavior (formation of double steps at low miscut angle) has already been observed by other groups. 17,28 046101 The two-step process was then used to grow a GaAs layer on this optimized Si surface. The AFM image of a 150 nm thick GaAs layer is shown in Figure 1(c).…”

Section: -2mentioning

confidence: 99%

“…This observation is similar to those previously reported by Stolz et al on the MOCVD epitaxy of GaP on silicon. 17,31,32 In their experiment, they have to grow first a thick Si-buffer and anneal it at high temperature to be able to obtain the right Si surface preparation and reconstruction prior to GaP heteroepitaxy. Our process is simpler and better suited for industrial purpose as it eliminates the Si buffer growth and annealing to obtain an APB-free material.…”

Section: -2mentioning

confidence: 99%

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Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

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Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

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Section: -2mentioning

confidence: 99%

Section: -2mentioning

confidence: 99%

Section: -2mentioning

confidence: 99%

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Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

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“…GaP was grown by a two-step growth method. 1,9 First, a nominally 5-nm-thick low-temperature nucleation layer (NL) was grown at 475 C. All the temperatures mentioned in this report are thermocouple readings. Then, the reactor temperature was ramped up to grow a 75-nm-thick GaP layer under many different V/III ratios and growth temperatures to examine the effects of different growth conditions on the properties of the GaP layer.…”

Section: Methodsmentioning

confidence: 99%

“…1,9 The relation between the growth conditions and layer morphology was examined by growing GaP layers at different temperatures and V/III ratios. Figure 1 presents the morphology of a 75-nm-thick GaP layer grown at different temperatures.…”

Section: A Optimization Of Layer Morphologymentioning

confidence: 99%

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

Jussila

Nagarajan

Huhtio

et al. 2012

Journal of Applied Physics

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This paper examines the structural properties of gallium phosphide layers by high resolution x-ray diffraction and atomic force microscopy measurements. GaP layers are grown on misoriented and nominally exactly oriented silicon (001) substrates by metalorganic vapor phase epitaxy. Structural characterization is performed by reciprocal lattice map and transverse scan measurements of (00l)-reflections (l = 2, 4, 6). Transverse scan line profiles of GaP layers on exactly oriented and misoriented substrates are compared thoroughly and antiphase disorder related satellite peaks are observed on exactly oriented substrates. In addition, results imply that antiphase disorder is self-annihilated on misoriented substrates. The dependence of crystallographic tilt on growth temperature indicates structural coherence. Williamson-Hall-like plot of transverse scans reveals the lateral correlation length of crystalline defects of 79 nm which gives the average size of the mosaic crystallites. In addition, the mosaicity of the GaP layer is 0.042°.

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III–V Optoelectronic Devices Grown on Silicon

Tang

Sun

Zhan

et al. 2021

Digital Encyclopedia of Applied Physics

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Silicon‐based optoelectronic devices, including silicon‐based lasers and silicon‐based photodetectors (PDs), are essential parts for silicon‐based optoelectronic integration. With the advancement of material epitaxy technologies such as metal–organic chemical vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE), it has become possible to integrate III–V semiconductor optoelectronic devices, especially by monolithic growth, with low‐cost and large‐sized silicon substrates. However, the differences in material properties such as lattice constant, polarity, and thermal expansion coefficient between III–V materials and silicon lead to tremendous challenges in monolithic growth. In recent years, the unique three‐dimensional quantum confinement and defect insensitivity characteristics of quantum dots have greatly improved the performance of optoelectronic devices. This article reviews recent research progress in monolithic growth and optoelectronic devices of III–V semiconductor materials on silicon substrates, emphasizing the development of silicon‐based quantum dot optoelectronic devices.

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Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

Cited by 168 publications

References 12 publications

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

III–V Optoelectronic Devices Grown on Silicon

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