Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers

Abstract

Heteroepitaxial growth of indium gallium phosphide (In1-x Ga x P) with x ∼0.7 was successfully achieved on a silicon (Si) substrate by introducing step-graded buffer layers which consist of a gallium phosphide (GaP) buffer layer and In1-x Ga x P layers whose gallium (Ga) composition x decreases in steps toward the direction of the growth. For the GaP buffer layer, the effects of thermal cycle annealing (TCA) were studied using a Rutherford back scattering channeling (RBS-C) measurement. The layer was shown to be improved greatly and a high-quality heteroepitaxial GaP layer could be obtained in the region close to the surface by introducing TCA. For the In1-x Ga x P step-graded layers, the lattice strain, investigated using X-ray diffraction, was shown to be more relaxed using a Si substrate than using a GaP substrate. The growth of InGaP on a Si substrate with the step-graded layers is an effective method to reduce the strain in the InGaP layer.

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

“…A composition of several bright-field TEM cross-section images acquired in the [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Bragg condition, mapping a 4-lm-tall GaAs/Ge crystal grown on a 15-lm-wide Si pillar, is presented in Fig. 5(a).…”

“…[7][8][9] Several attempts to reduce the high threading dislocation density (TDD) resulting from the direct growth of GaAs on Si involve the growth of graded InGaP and GaAsP intermediate layers. 10,11 An extension of this method consists of the integration of GaP-GaAs or InGaAs/GaAs strained super-lattices as transition layers which actively deflect the threading dislocations. [12][13][14] Probably the most widespread procedure involves the integration of Ge and SiGe virtual substrates.…”

Evolution of microstructure and dislocation dynamics in InxGa1−xP graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials

“…In x Ga 1Ϫx P alloys with band gaps that are difficult or impossible to achieve lattice-matched to GaAs substrates can be grown on graded buffers, 1 expanding the range of emission wavelengths into the infrared and providing direct band gap emission of the critical amber to infrared wavelengths inaccessible to GaN-based light emitting diode ͑LED͒ and laser diode technologies. 7 Graded buffers are grown to efficiently relieve latticemismatch strain between substrates and films of differing lattice constants. 2 In x Ga 1Ϫx P/GaP substrates are also inherently transparent to devices grown on them, which roughly doubles light extraction efficiency in LEDs compared to those grown on absorb-ing substrates such as GaAs, and offer significant processing advantages over the current transparent-substrate LED technology.…”

Energy Band Diagram near the Interface of Aluminum Oxide on p-Si Fabricated by Atomic Layer Deposition without/with Rapid Thermal Cycle Annealing Determined by Capacitance—Voltage Measurements

“…1. Next, the effect of rapid thermal cycle annealing (RTCA) [21][22][23][24][25][26] was verified by comparing the Q f and the D it . The C-V curves were measured before and after RTCA, which consisted of 3 × 7 minutes (21 minutes in total) of post-deposition annealing on a belt conveyor in an infrared-ray radiation oven in ambient atmosphere at 425 • C. The temperature used in RTCA was decided by this report we referred [6].…”