Heteroepitaxial growth of indium gallium phosphide (In1-x
Ga
x
P) with x ∼0.7 was successfully achieved on a silicon (Si) substrate by introducing step-graded buffer layers which consist of a gallium phosphide (GaP) buffer layer and In1-x
Ga
x
P layers whose gallium (Ga) composition x decreases in steps toward the direction of the growth. For the GaP buffer layer, the effects of thermal cycle annealing (TCA) were studied using a Rutherford back scattering channeling (RBS-C) measurement. The layer was shown to be improved greatly and a high-quality heteroepitaxial GaP layer could be obtained in the region close to the surface by introducing TCA. For the In1-x
Ga
x
P step-graded layers, the lattice strain, investigated using X-ray diffraction, was shown to be more relaxed using a Si substrate than using a GaP substrate. The growth of InGaP on a Si substrate with the step-graded layers is an effective method to reduce the strain in the InGaP layer.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.