Heteroepitaxial Growth of III–V Semiconductors on 2D Materials

Alaskar, Yazeed; Arafin, Shamsul; Martínez-Velis, I.; L.Wang, Kang

doi:10.5772/64419

Cited by 6 publications

(7 citation statements)

References 62 publications

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“…4c). We observe a constant peak position, indicative of β-Cu 2 S, for both thin and thick regions, which suggests that interfacial strain buildup as observed for surface-stabilized growth 41 and out-of-equilibrium formation mechanisms 40 does not occur.…”

Section: Properties Of 2d Crystals Grown By Planarized Reactionmentioning

confidence: 65%

Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions

et al. 2021

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We here present a planarized solid-state chemical reaction that can produce transition metal monochalcogenide (TMMC) 2D crystals with large lateral extent and finely controllable thickness down to individual layers. The enhanced lateral diffusion of a gaseous reactant at the interface between a solid precursor and graphene was found to provide a universal route towards layered TMMCs of different compositions. A unique layer-by-layer growth mechanism yields atomically abrupt crystal interfaces and kinetically controllable thickness down to a single TMMC layer. Our approach stabilizes 2D crystals with commonly unattainable thermodynamic phases, such as β-Cu2S and γ-CuSe, and spectroscopic characterization reveals ultra-large phase transition depression and interesting electronic properties. The presented ability to produce large-scale 2D crystals with high environmental stability was applied to highly sensitive and fast optoelectronic sensors. Our approach extends the morphological, compositional, and thermodynamic complexity of 2D materials.

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Section: Properties Of 2d Crystals Grown By Planarized Reactionmentioning

confidence: 65%

Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions

et al. 2021

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“…First introduced by Koma et al [173] in 1984, van der Waals (vdW) epitaxy is an epitaxial process whereby the epilayer is bonded to the substrate via weak vdW interaction, instead of the much stronger chemical bonds in conventional epitaxy [174][175][176]. Thanks to several unique advantages offered by the growth technique compared to conventional epitaxy, vdWE can potentially be exploited as an alternative epitaxy technique for low-cost III-V solar cells in the future.…”

Section: Iii-v On 2d Materials and Van-der-waals Epitaxymentioning

confidence: 99%

“…figure 10. Due to the difference in binding mechanism at the 3D/2D material interface compared to conventional epitaxy (figure 10(a)) or pure vdW expitaxy between 2D materials (figure 10(b)), the 3D-on-2D epitaxy (figure 10(c)) is specifically called quasi-vdW epitaxy [174,177]. The weak vdW interaction between the substrate (2D) and the film (3D) allows for increased defect tolerance, and near strain-free thin film growth can be realised [178].…”

Section: Fundamental Mechanism and Potential Advantagesmentioning

confidence: 99%

“…Since the III-V atoms are weakly bound to the 2D substrate surface by vdW forces, the III-V overlayer has incommensurate in-plane lattices at the heterointerface, unlike the coherent interface formed in conventional heteroepitaxy [175]. Moreover, the weak bonding at the heterointerface results in strain-free epitaxy layer, which can significantly suppress the formation of strain-induced defects such as threading dislocations and stacking faults in the grown material [174,175,181]. Different research groups have demonstrated the use of graphene [179,182] and hBN [183,184] as a buffer layer to relieve thermal and lattice mismatch between III-V epilayers and highly lattice-mismatched substrates.…”

Section: Fundamental Mechanism and Potential Advantagesmentioning

confidence: 99%

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Topical review: pathways toward cost-effective single-junction III–V solar cells

Raj¹,

Haggrén²,

Wong³

et al. 2021

J. Phys. D: Appl. Phys.

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III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

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“…[36][37][38] Moreover, 2D layers can also be transferred onto arbitrary substrates without lattice matching requirement. It makes 2D materials compatible with silicon, [39] III-V compounds, [40] ferroelectric perovskite, [41] ultrawide bandgap semiconductors, [42] and other technologies, creating new possibilities in heterogenous integration of even more sophisticated memory systems. [43,44] In addition, 2D materials are applicable to flexible electronic circuitry as a complement to rigid silicon CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Liu

Yang

et al. 2022

Advanced Materials

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random-access memory (DRAMs), static random-access memory (SRAMs), [1] and flash memory, [2] multiple transistors and capacitors are employed to constitute a single functional cell. These functional cells are typically integrated to form a memory array for advanced functionality, miniaturized footprints, low power consumption, and reduced latency. Traditional silicon-based complementary metal-oxidesemiconductor (CMOS) technology has been widely used to build these memory arrays. However, the performance improvement of CMOS-based memory relies on the advance of nanofabrication technology to scale down the feature size of transistors, which is approaching the physical limit. [3] To overcome this bottleneck, emerging memory technologies are brought up as promising supplements to conventional memory devices. [4] These novel types of memory include resistive random-access memory (RRAM), [5,6] ferroelectric RAM (FeRAM), [7] optoelectronic RRAM (ORRAM), [8,9] phase-change memory (PCM), [10] and spin-transfer torque magnetoresistive RAM (STT-MRAM). [11,12] Furthermore, emerging memory devices allow non-von-Neumann architectures that pave the way toward high-performance in-memory computing technology. [13,14] For example, memristive crossbar arrays composed of 1-transistor-1-resistor (1T1R) unit cells can enable in-memory computing and are the most cost-efficient thanks to their two-terminal structure. [15] Advanced 3D monolithic stacking integration also emerges as a promising approach to Memory technologies and applications implemented fully or partially using emerging 2D materials have attracted increasing interest in the research community in recent years. Their unique characteristics provide new possibilities for highly integrated circuits with superior performances and low power consumption, as well as special functionalities. Here, an overview of progress in 2D-material-based memory technologies and applications on the circuit level is presented. In the material growth and fabrication aspects, the advantages and disadvantages of various methods for producing large-scale 2D memory devices are discussed. Reports on 2D-material-based integrated memory circuits, from conventional dynamic random-access memory, static random-access memory, and flash memory arrays, to emerging memristive crossbar structures, all the way to 3D monolithic stacking architecture, are systematically reviewed. Comparisons between experimental implementations and theoretical estimations for different integration architectures are given in terms of the critical parameters in 2D memory devices. Attempts to use 2D memory arrays for in-memory computing applications, mostly on logic-in-memory and neuromorphic computing, are summarized here. Finally, challenges that impede the large-scale applications of 2D-material-based memory are reviewed, and perspectives on possible approaches toward a more reliable system-level fabrication are also given, hopefully shedding some light on future research.

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Heteroepitaxial Growth of III–V Semiconductors on 2D Materials

Cited by 6 publications

References 62 publications

Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions

Ultra-thin 2D transition metal monochalcogenide crystals by planarized reactions

Topical review: pathways toward cost-effective single-junction III–V solar cells

Circuit‐Level Memory Technologies and Applications based on 2D Materials

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