Heterodielectric oxide‐engineered single‐lateral pocket‐based gated source <scp>TFET</scp>

Ashita,; Loan, Sajad A.; Alkhammash, Hend I.; Rafat, M.

doi:10.1002/jnm.2877

Cited by 5 publications

(3 citation statements)

References 48 publications

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“…The tunneling field-effect transistor (TFET) is a promising device to replace the conventional MOSFET as a transistor as well as a biosensor. It is devoid of the abovementioned issues present in the conventional MOSFET as its operation relies on quantum mechanical tunneling. − ,− TFETs, on the other hand, display ambipolar conduction, which is the flow of drain current for both polarities of the gate voltage. It relies on the band-to-band tunneling (BTBT) of carriers at the interface between the drain/channel and also on dielectric constant.…”

Section: Introductionmentioning

confidence: 99%

Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor

Hussian,

Alkhammash,

Wani

et al. 2024

ACS Appl. Bio Mater.

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In this study, we design and simulate a metal implanted dielectrically modulated tunneling field-effect transistor (MI-DMTFET). In the ambipolar conduction state, the proposed structure works as an efficient sensor for the detection of a wide range of biomolecules. A metal strip (MS) is implanted above the drain−channel junction in the gate dielectric to improve the alignment of band gaps. Therefore, with the help of implanted metal work function engineering, the tunneling barrier gets lowered, which in turn increases the ambipolar current. An optimum metal-strip implant work function of 4.85 eV and a length of 1.5 nm have resulted in significantly improved performance of the proposed device. It has been observed that when the biomolecules with varying dielectric constants and charge densities are captured in the nanogap cavity, the ambipolar current of the biosensor changes, resulting in the detection of the biomolecules. Quantitative and comprehensive analyses of device parameters such as surface potential, electric field, band-to-band tunneling, subthreshold slope, and I ON /I OFF ratio analysis have been performed. Rigorous comparative analyses of key performance-measuring parameters have been performed with a conventional sensor device. It has been found that the proposed device offers maximum sensitivity of 1220 under an ambipolar state at k = 12.

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Section: Introductionmentioning

confidence: 99%

Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor

Hussian,

Alkhammash,

Wani

et al. 2024

ACS Appl. Bio Mater.

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“…However, it has been observed that TFETs suffer from two major drawbacks: (i) the low ON current and (ii) its ambipolar behaviour. Different approaches have been adopted to improve ON current, viz., hetero gate dielectric [5,6], heterojunction TFET [7,8], multigate technology [9,10], gate all around (GAA) structures [11], and pocket doping [12,13]. Gate work function engineering, high-K stacked gate oxide layers [14], and other techniques have also been followed for enhancing the ON current while keeping the OFF current under control.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of split high–K material based stacked hetero-dielectrics tunnel FET

Das,

Dhar,

Ghosh

2023

Phys. Scr.

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This research investigates the performance evaluation of a double gate TFET (DGTFET) by employing a hetero-dielectric gate structure featuring distinct high-K dielectrics with different work functions in a dual-material gate configuration. The gate dielectric stack is comprised of split high–K materials placed on the SiO2 dielectric. An outline of the analytical model for the validation of the novel device is developed and 2-D simulations-based analysis and investigation are carried out. The impact of different high-K dielectric materials layered on top of silicon dioxide (SiO2) is examined; its effect on transfer characteristics, subthreshold swing (SS), minimum tunneling width, ratio of ON to OFF currents ION/IOFF, and energy band bending are investigated. The work functions optimization for the auxiliary and tunnel gates are made in this work to minimize OFF current, to reduce ambipolar phenomena and to enhance tunnel rate. The effects of gate potentials, source/ drain doping concentrations on the results are further studied. The threshold voltage of DGTFET is also modelled and computed for the proposed structures. The present findings revealed that the low OFF current (10-17 A/µm) is provided by the proposed device structure, improved ratio of ION/IOFF (1011), and lowered subthreshold swing required for future era.

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“…A hetero-dielectric gate (HDG) TFET has been proposed by researchers to increase the on-current and suppress the ambipolar current in the device. [30][31][32][33][34] In this proposed structure, high-κ oxide is placed near the source to induce a local minima of conduction band edge of the tunneling junction and low-κ oxide is placed near drain to suppress the ambipolar current. The electrical characteristics of these HDG TFET devices are mostly predicted with the help of TCAD simulator.…”

Section: Introductionmentioning

confidence: 99%

Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)

Singh

Fui

Soong

2021

Int J Numerical Modelling

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Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep-submicron region due to its lower SS (subthreshold swing, <60 mV/ decade) at room temperature. However, the conventional TFET suffers from low tunneling current and high ambipolar current. To overcome these two shortcomings, a new structure, known as Hetero-dielectric gate TFET (HDG TFET), has been proposed in the literature. To analyze the electrical characteristics of this structure, a closed form of analytical expression of current is required. This paper presents the analytical current model for Hetero-dielectric single gate (HDSG) TFET structure without using any iterative method. The developed analytical models show a good agreement with 2-D TCAD simulator results. The model is used to study the electrical behavior of the proposed device under various physical and bias variations.

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Heterodielectric oxide‐engineered single‐lateral pocket‐based gated source TFET

Cited by 5 publications

References 48 publications

Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor

Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor

Performance evaluation of split high–K material based stacked hetero-dielectrics tunnel FET

Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)

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