1955
DOI: 10.1515/zna-1955-0805
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Herstellung und elektrische Eigenschaften von InP und GaAs

Abstract: II = 1,12 //g Os aus MOS2 "Lofoten" enthält 0,034 //g "normales" Os = 3,0%; III = 0,80 jug Os "normales" Os; IV =4,13 ug Os enthält 2,80 ,ug "normales" Os = 68,0%;

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Cited by 68 publications
(6 citation statements)
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“…The mobility of charge carriers is a key parameter of materials used in optoelectronics. Halide perovskites, an exciting material class, are susceptible to electron-beam-induced degradation and to (halide) ion drift, limiting suitable measurement techniques . Studies have thus focused on thin films and single macrocrystals, with nanostructures proven challenging.…”
mentioning
confidence: 99%
“…The mobility of charge carriers is a key parameter of materials used in optoelectronics. Halide perovskites, an exciting material class, are susceptible to electron-beam-induced degradation and to (halide) ion drift, limiting suitable measurement techniques . Studies have thus focused on thin films and single macrocrystals, with nanostructures proven challenging.…”
mentioning
confidence: 99%
“…An even larger amount of compensation is indicated for crystal An of Folberth and Weiss (11), which has a maximum mobility of about 8000 cm~/v-sec, for an electron concentration of about 4 f 10 TM cm-t Our observations indicate a lattice mobility at 290~ of 5000 cm~/v-sec. This would indicate that previous observations of Harman and Stambaugh (10) of a maximum mobility of 14,000 cm2/v-sec at ll0~ for a crystal with an electron concentration of 4 x 1015 cm -~ involved considerable compensation, perhaps of a factor five or more.…”
Section: Discussionmentioning
confidence: 58%
“…This would indicate that previous observations of Harman and Stambaugh (10) of a maximum mobility of 14,000 cm2/v-sec at ll0~ for a crystal with an electron concentration of 4 x 1015 cm -~ involved considerable compensation, perhaps of a factor five or more. An even larger amount of compensation is indicated for crystal An of Folberth and Weiss (11), which has a maximum mobility of about 8000 cm~/v-sec, for an electron concentration of about 4 f 10 TM cm-t Our observations indicate a lattice mobility at 290~ of 5000 cm~/v-sec. The mobility observations have been fitted by a mixture of lattice scattering and ionized impurity scattering.…”
Section: Discussionmentioning
confidence: 58%
“…Crystals were grown by this technique which exhibited resistivities typically 0.07 ohm-cm, corresponding to 10 TM holes/cm S and Hall mobilities of 92 cm2/Vsec. A similar degree of control of the liquidus composition may be attained during zone melting of InP in an arrangement as described by Folberth and Weiss (38). Further details of the preparation of InP crystals, characterization of their purity and defect structure, and a discussion of kinetic effects during InP crystal growth, will be presented elsewhere (39).…”
Section: Growth Of Inp Crystal From the Meltmentioning
confidence: 74%