Herstellung und elektrische Eigenschaften von InP und GaAs

Folberth, O. G.; Weiß, H.

doi:10.1515/zna-1955-0805

Cited by 68 publications

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“…The mobility of charge carriers is a key parameter of materials used in optoelectronics. − Halide perovskites, an exciting material class, − are susceptible to electron-beam-induced degradation and to (halide) ion drift, limiting suitable measurement techniques . Studies have thus focused on thin films and single macrocrystals, with nanostructures proven challenging.…”

mentioning

confidence: 99%

Real-Time Electron and Hole Transport Dynamics in Halide Perovskite Nanowires

et al. 2019

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For optoelectronic devices, high transport mobilities of electrons and holes are desirable, which, moreover, should be close to identical. Acousto-optoelectric spectroscopy is employed to probe the spatiotemporal dynamics of both electrons and holes inside CsPbI3 nanowires. These dynamics are induced without the need for electrical contacts simply by the piezoelectric field of a surface acoustic wave. Its radio frequency of fSAW = 324 MHz natively avoids spurious contributions from ion migration typically occurring in these materials. The observed dynamic modulation of the photoluminescence is faithfully reproduced by solving the drift and diffusion currents of electrons and holes induced by the surface acoustic wave. These calculations confirm that the mobilities of electrons and holes are equal and quantify them to be μe = μh = 3 ± 1 cm2 V–1 s–1. Additionally, carrier loss due to surface recombination is shown to be largely suppressed in CsPbI3 nanowires. Both findings mark significant advantages over traditional compound semiconductors, in particular, GaAs, for applications in future optoelectronic and photovoltaic devices. The demonstrated sublifetime modulation of the optical emission may find direct application in switchable perovskite light-emitting devices employing mature surface acoustic wave technology.

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confidence: 99%

Real-Time Electron and Hole Transport Dynamics in Halide Perovskite Nanowires

et al. 2019

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“…An even larger amount of compensation is indicated for crystal An of Folberth and Weiss (11), which has a maximum mobility of about 8000 cm~/v-sec, for an electron concentration of about 4 f 10 TM cm-t Our observations indicate a lattice mobility at 290~ of 5000 cm~/v-sec. This would indicate that previous observations of Harman and Stambaugh (10) of a maximum mobility of 14,000 cm2/v-sec at ll0~ for a crystal with an electron concentration of 4 x 1015 cm -~ involved considerable compensation, perhaps of a factor five or more.…”

Section: Discussionmentioning

confidence: 58%

“…This would indicate that previous observations of Harman and Stambaugh (10) of a maximum mobility of 14,000 cm2/v-sec at ll0~ for a crystal with an electron concentration of 4 x 1015 cm -~ involved considerable compensation, perhaps of a factor five or more. An even larger amount of compensation is indicated for crystal An of Folberth and Weiss (11), which has a maximum mobility of about 8000 cm~/v-sec, for an electron concentration of about 4 f 10 TM cm-t Our observations indicate a lattice mobility at 290~ of 5000 cm~/v-sec. The mobility observations have been fitted by a mixture of lattice scattering and ionized impurity scattering.…”

Section: Discussionmentioning

confidence: 58%

Electron Mobility in InP

Glisksman¹,

Weiser

1958

J. Electrochem. Soc.

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The Hall mobility of electrons in InP has been observed as a function of temperature and of carrier concentration. A lattice mobility of 5000 cm~/v-sec at 290~ is calculated from these results, varying with temperature at least as rapidly as T -2. The observations can be interpreted by assuming a combination of lattice and ionized impurity scattering with an effective mass of the order of 0.05 mo or less.

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“…Crystals were grown by this technique which exhibited resistivities typically 0.07 ohm-cm, corresponding to 10 TM holes/cm S and Hall mobilities of 92 cm2/Vsec. A similar degree of control of the liquidus composition may be attained during zone melting of InP in an arrangement as described by Folberth and Weiss (38). Further details of the preparation of InP crystals, characterization of their purity and defect structure, and a discussion of kinetic effects during InP crystal growth, will be presented elsewhere (39).…”

Section: Growth Of Inp Crystal From the Meltmentioning

confidence: 74%

Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InP

Bachmann¹,

Buehler²

1974

J. Electrochem. Soc.

110

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The vapor pressure as a function of temperature of several commercial grades of red phosphorus and a specially prepared crystalline sample has been measured. For crystalline red P we obtain a heat of sublimation, δHs=31.9±1 normalkcal/normalmole . The commercial grades yield vapor pressures, which above 450°C are described by the equation In p=−false(10.8±0.4false)×103/T+false(16.5±0.6false) . The sublimation equilibrium of red P can be utilized for controlling phosphorus pressures, p>10 normalatm , with a reproducibility of 10% if commercial P of at least 5N purity is used. Measurements of the pVT relation of phosphorus vapor in the regimes 800°K≤T≤1400°K and 3 normalatm≤p≤35 normalatm reveal deviations up to 10% from ideal gas behavior. Excellent accuracy in describing the behavior of phosphorus vapor is obtained when van der Waals equation is used in conjunction with the critical data of Marckwald and Helmholz and a critical coefficient of 0.375 for calculation of both the co‐volume and the interaction parameter. Consideration of the pressure dependence of the equilibrium constant Kp for the reaction P4=2P2 yielded approximate values for the fugacity constant at 1000° and 1100°C. The pTx relation at the liquidus in the vicinity of stoichiometric InP for indium‐rich and phosphorus‐rich compositions were established by simultaneous vapor pressure and DTA measurements. The melting point of stoichiometric InP is 1335°±1°K and the corresponding equilibrium phosphorus pressure is 27.5±1 normalatm . T−x liquidus data calculated with the assumption of ideal behavior of the liquid are in good agreement with our experimental data. Interpretation of the liquidus pressure data yields values of the standard enthalpies and entropies at 298° K normalΔH°298=22.1 normalkcal/normalmole,normalΔS°298=15.78 normale.normalu. for the reaction normalInP)(normalsfalse)=normalIn)(normals+1/4 P4)(normalg and normalΔH°298=36.0 normalkcal/normalmole,normalΔS°298=25.28 normale.normalu. for the reaction normalInP)(normalsfalse)=normalIn)(normals+1/2 P2)(normalg These results are in excellent accord with the standard enthalpies reported by Panish and Arthur and agree within 3% with literature data on the standard entropies of the reactants. The growth of n‐ and p‐type InP crystals via the gradient freeze technique is discussed and the degree of control of the liquidus concentration is evaluated for various conditions of crystal growth.

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Herstellung und elektrische Eigenschaften von InP und GaAs

Abstract: II = 1,12 //g Os aus MOS2 "Lofoten" enthält 0,034 //g "normales" Os = 3,0%; III = 0,80 jug Os "normales" Os; IV =4,13 ug Os enthält 2,80 ,ug "normales" Os = 68,0%;

Cited by 68 publications

References 0 publications

Real-Time Electron and Hole Transport Dynamics in Halide Perovskite Nanowires

Real-Time Electron and Hole Transport Dynamics in Halide Perovskite Nanowires

Electron Mobility in InP

Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InP

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